Infineon Technologies Ag

Cree Gmbh

Wolfspeed, Inc.

Saurabh Goel

Richard Wilson

Alexander Komposch

Haedong Jang

Cynthia Blair

Cristian Gozzi

A multi-cavity package includes a single metal flange having first and second opposing main surfaces. The multi-cavity package also includes a circuit board attached to the first main surface of the single metal flange. The circuit board includes a first surface facing the single metal flange, and a second surface facing away from the first surface. The circuit board also includes a plurality of openings exposing different regions of the first main surface of the single metal flange. The circuit board also includes a lateral extension that overhangs the single metal flange. A corresponding method of manufacturing is also provided.

Multi-cavity package having single metal flange

A multi-cavity package includes a single metal flange having first and second opposing main surfaces, a circuit board attached to the first main surface of the single metal flange, the circuit board having a plurality of openings which expose different regions of the first main surface of the single metal flange, and a plurality of semiconductor dies each of which is disposed in one of the openings in the circuit board and attached to the first main surface of the single metal flange. The circuit board includes a plurality of metal traces for electrically interconnecting the semiconductor dies to form a circuit. A corresponding method of manufacturing is also provided.

Exemplary embodiments including an amplifier circuit that includes a radio-frequency (RF) amplifier comprising an input terminal and an output terminal, the RF amplifier being configured to amplify, across a wideband frequency range, an RF signal applied to the input terminal to generate an amplified RF signal at the output terminal. The amplifier circuit also includes a first impedance matching network connected to the RF amplifier output terminal. The first impedance matching network includes a first reactive circuit, having substantially fixed impedance, connected between the RF amplifier input terminal and ground; a second reactive circuit; and a switching device configured to couple the second reactive circuit to the first reactive circuit in an ON state, and to decouple the second reactive circuit from the first reactive circuit in an OFF state. In some embodiments, the amplifier circuit can include a second impedance matching network connected to the RF amplifier input terminal.

LC network for a power amplifier with selectable impedance

An amplifier is configured to amplify an RF signal as between an input terminal and an output terminal across a wideband frequency range. A first LC network is connected to the input terminal and has first and second reactive components. A first switching device is connected between the first and second reactive components and couples both the first and second reactive components to the input terminal in an ON state, and disconnects the second reactive component from the input terminal in an OFF state. A second LC network is connected to the output terminal and has third and fourth reactive components. A second switching device is connected between the third and fourth reactive components and couples both the third and fourth reactive components to the output terminal in an ON state and disconnects the fourth reactive component from the output terminal in an OFF state.

A power circuit includes a RF transistor and an input match network coupled to an input to the RF transistor and to an input to the power circuit. The input match network includes a resistor, an inductor and a first capacitor coupled together in series between the input to the RF transistor and a ground, and a second capacitor coupled in parallel with at least the resistor. The value of the second capacitor is selected so that the resistor is bypassed over at least a portion of the high frequency range of the power circuit.

Input match network with RF bypass path

A symmetric Doherty amplifier includes a main amplifier and a peaking amplifier of the same size as the main amplifier. The symmetric Doherty amplifier is configured to operate at peak output power when the main amplifier and the peaking amplifier are each in saturation, and at output-back-off (OBO) when the main amplifier is in saturation and the peaking amplifier is not in saturation. Phase shift circuitry is configured to shift the phase at an output of the peaking amplifier at OBO so that a load impedance seen by the main amplifier and efficiency of the symmetric Doherty amplifier both increase at OBO as a function of the phase shift at the peaking amplifier output.

Doherty amplifier circuit with phase-controlled load modulation

A power circuit includes a RF transistor and an input match network coupled to an input to the RF transistor and to an input to the power circuit. The input match network includes a resistor, an inductor and a capacitor that are coupled together in series between the input to the RF transistor and a ground. The values of the resistor and the inductor are selected to match an input impedance of the RF transistor to a source impedance at the input to the power circuit over at least a portion of a high frequency range, wherein the value of the capacitor has a substantially negligible contribution to the match at the high frequency range. The value of the capacitor is selected so that the series combination of the resistor, the inductor and the capacitor substantially reduce the magnitude of the impedance presented to the input of the RF transistor in a low frequency range relative to the source impedance at the input to the power circuit.

Input match network for a power circuit

An amplifier circuit includes an RF transistor, a parallel resonator and a series resonator. The RF transistor has an input, an output and an intrinsic output capacitance. The parallel resonator is connected to the output of the RF transistor and includes a first inductive component connected in parallel with the intrinsic output capacitance of the RF transistor. The series resonator connects the output of the RF transistor to an output terminal and includes a second inductive component connected in series with a capacitive component. The series resonator is operable to compensate for a change in impedance of the parallel resonator over frequency.

RF device with compensatory resonator matching topology

A wideband Doherty amplifier circuit includes a main amplifier configured to operate in a linear mode, a peaking amplifier configured to operate in a non-linear mode and a Doherty combiner directly connected to an output of each amplifier so that no output match devices are in the path between the amplifier outputs and the Doherty combiner. The Doherty combiner is configured to present the same load impedance to each amplifier when both amplifiers are conducting and present a modulated load impedance to the main amplifier when the peaking amplifier is non-conducting so that a variation in the VSWR seen by the main amplifier is less than 5% over a plurality of frequency bands and/or so that the peaking amplifier has an off-state impedance spreading of 20 degrees or less over the plurality of frequency bands.

Wideband doherty amplifier circuit with peaking impedance absorption

An amplifier circuit includes a first amplifier operable to turn on at a first power level, a second amplifier operable to turn on at a second power level below the first power level and a third amplifier operable to turn on at all power levels. A first power combiner is operable to combine an output of the third amplifier with an output of the second amplifier at a first power combining node to form a first combined amplifier output. A second power combiner is operable to combine the first combined amplifier output with an output of the first amplifier at a second power combining node to form a second combined amplifier output. An impedance transformer is operable to transform a load impedance of the amplifier circuit to a transformed impedance at the second power combining node, the transformed impedance matching an impedance of the first and second power combiners.

Wideband Doherty amplifier circuit with impedance combiner

A three way wideband Doherty amplifier circuit includes a first peaking amplifier operable to turn on at a first power level, a second peaking amplifier operable to turn on at a second power level below the first power level and a main power amplifier operable to turn on at all power levels. The main power amplifier has a high impedance load modulated state when the first and second peaking amplifiers are turned off. The three way wideband Doherty amplifier circuit further includes a constant impedance combiner connected to an output of each amplifier. The constant impedance combiner has a characteristic impedance which matches the impedance of the main amplifier in the high impedance load modulated state with or without an output matching device connecting the main amplifier output to the constant impedance combiner, as viewed from the output of the main amplifier.

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Campbell, CA, United States of America

Saurabh Goel