Applied Materials, Inc.

Satya Teja Babu Thokachichu

Kwangduk Douglas Lee

Prashant Kumar Kulshreshtha

Vinay K Prabhakar

Viren Kalsekar

Byung Seok Kwon

Ganesh Balasubramanian

Abdul Aziz Khaja

Edward P Hammond

Sungwon Ha

Ratsamee Limdulpaiboon

Anjana M Patel

Liangfa Hu

Bushra Afzal

In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300 C to about 700 C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

Plasma-enhanced chemical vapor deposition of carbon hard-mask

The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

Methods of reducing chamber residues

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San Jose, CA, United States of America

Satya Teja Babu Thokachichu