Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Satoshi Une

Masamichi Sakaguchi

Masahito Mori

Yasuhiro Nishimori

Yutaka Kudou

Masunori Ishihara

Kenetsu Yokogawa

Yuki Kondo

Ryota Takahashi

Kazunori Nakamoto

Kenichi Kuwahara

Kenichi Kuwabara

Hitoshi Kobayashi

Tomoyoshi Ichimaru

Masaaki Taniyama

Mai Isomoto

Ryo Ishimaru

An object of the invention is to provide a plasma processing method for preventing generation of deposition from an underlying metal film and attaining an anisotropic shape in hard mask etching. The plasma processing method for forming a mask using a film to be etched whose underlying layer is a metal film according to the invention includes: a first step of etching, using a plasma generated by mixed gas containing Ogas, CHFgas, NFgas, Ar gas, and He gas, while supplying pulse-modulated radio frequency power to a sample stage on which a sample having the film to be etched is placed; and a second step of etching while supplying continuous wave (CW) radio frequency power to the sample stage after the first step. The film to be etched is a TEOS film and a silicon nitride film, and the continuous wave (CW) radio frequency power is smaller than a product of the pulse-modulated radio frequency power and a pulse-modulated duty ratio and is smaller than 50 W.

Plasma processing method

The invention provides a plasma processing method in which plasma etching is performed on a film to be etched by using a mask, the plasma processing method including: a deposition step of depositing a deposition film containing a boron element on the mask while a radio frequency power is supplied to a sample table on which a sample formed with the film to be etched is placed; and an etching step of etching the film to be etched by using plasma after the deposition step.

Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatusincludes a first electrode (a base materialB) disposed in a sample stage, a ring-shaped second electrode (a conductive ring) disposed surrounding an outer peripheral side of an upper surface portion(a dielectric film portionA) of the sample stage, a dielectric ring-shaped member (a susceptor ring) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching devicedisposed on a power supply path to the second electrode. Further, a first position (A) and a grounding position between the second electrode and the matching deviceon the power supply path to the second electrode are electrically connected via a resistorhaving a predetermined value.

Plasma processing apparatus

A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.

Plasma etching method

The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.

The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a materialto be etched using a mask pattern composed of a photoresistand inorganic filmsandmade of SiN, SiON, SiO and the like formed on the materialto be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF, CHF, SFand NFis used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the materialto be etched.

Dry etching method

The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.

Growing community of inventors

Tokyo, Japan

Satoshi Une