Tokyo Electron Limited

Tolyo Electron Limited

Satoshi Mizunaga

Takehiro Otsuka

Mitsuhiro Okada

Atsushi Endo

Akinobu Kakimoto

Yoshinobu Hayakawa

Yasuhiro Hamada

Yamato Tonegawa

Toshiharu Nishimura

Naohide Ito

Tomoyuki Obu

Hiroaki Dewa

A processing apparatus includes a first chamber having a gas first inlet and a first gas outlet, a plasma generator that generates a plasma in the first chamber, and a second chamber having a second gas inlet and a second gas outlet. A control unit controls the first inlet to provide a carbon containing gas to the first chamber and control the plasma generator to apply a first plasma to a silicon-containing film of a substrate to a first depth. The control unit controls the second gas inlet to apply another gas inside the second chamber and deposit a second part of the protection film over the first part of the protection film. The control unit controls a supply of a fluorocarbon gas through the first gas inlet and control the plasma generator to generate a second plasma to etch the silicon-containing film to a second depth.

Processing apparatus

Provided is a method of supplying a liquid raw material to a gas supply device. The gas supply device includes: a storage tank that stores the liquid raw material; a heating unit that heats the liquid raw material to generate a raw material gas; a level detecting unit that detects a liquid surface level of the liquid raw material stored in the storage tank; a gas inlet and a gas outlet provided in the storage tank; and a raw material inlet provided in the storage tank. The method includes: determining whether the liquid surface level of the liquid raw material is equal to or lower than a supply target level; and repeating supply of a specified amount of liquid raw material to the storage tank a specified number of times when the liquid surface level of the liquid raw material is equal to or lower than the supply target level.

Liquid raw material supplying method and gas supply apparatus

There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon. The film forming apparatus is provided separately from the etching apparatus, the etching apparatus performing, a first etching step in which the film including silicon is partway etched by using plasma; and a second etching step in which the film including silicon, on which the film including carbon is formed, is further etched by using plasma, the film forming apparatus performing a film forming step in which the film including carbon is formed, without generating plasma, on the film including silicon on which the first etching step has been performed.

Substrate processing system and substrate processing method

According to an embodiment of present disclosure, a method of forming a carbon film on a substrate to be processed is provided. The method includes loading a substrate to be processed with a carbon film formed thereon into a processing chamber of a film forming apparatus (Process), and thermally decomposing a hydrocarbon-based carbon source gas in the processing chamber to form a carbon film on the substrate to be processed (Process). In Process, a film forming temperature of the carbon film is set to a temperature less than a thermal decomposition temperature of a simple substance of the hydrocarbon-based carbon source gas without plasma assistance, the hydrocarbon-based carbon source gas and a thermal decomposition temperature drop gas containing a halogen element are introduced into the processing chamber, and a non-plasma thermal CVD method is performed.

Method and apparatus of forming carbon film

A method of operating a film forming apparatus includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container and performing a cleaning process with a cleaning gas to remove an unnecessary carbon film adhered on a inside of the processing container, wherein the method further includes, before the forming of the carbon film, forming, on a surface of a member contacting a processing space in the processing container, a tolerant pre-coating film which has a tolerance to the cleaning gas and improves adhesion of the carbon film to the surface of the member. Accordingly, the adhesion of the carbon film is improved, and further, the tolerant pre-coating film remains even when the cleaning process of removing the unnecessary carbon film is performed.

Film forming apparatus and method of operating the same

Provided is a method of operating a film forming apparatus capable of suppressing generation of particles by improving an adhesion of a carbon film to surfaces of members which are formed of a quartz material and contact a processing space in a processing container. The method includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container formed of a quartz material, wherein the method further includes forming an adhesion film to improve the adhesion of the carbon film, on surfaces of members which are formed of a quartz material and contact a processing space in the processing container. Accordingly, the adhesion of the carbon film to the surface of the member formed of a quartz material contacting the processing space in the processing container is improved, thereby suppressing generation of particles.

A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.

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Nirasaki, Japan

Satoshi Mizunaga