Fujitsu Corporation

Satoshi Komiya

Naoki Awaji

Shunji Kashiwagi

Shinichi Morohashi

X-rays are irradiated to a sample to be measured including at least one layer of film formed on a substrate; an interference oscillation curve of the X-rays incident on the sample to be measured is measured; and a concentration of an element adhered on a surface of the sample to be measured and/or segregated in an interface of the film is measured. The interference oscillation curve is fitted to an analysis formula expressing an X-ray reflectance to thereby determining a density of a region of the sample to be measured, where the element is adhered or is segregated, and a concentration of the element is computed based on the density.

Element concentration measuring method and apparatus, and semiconductor

A film thickness measuring method comprises the steps of measuring reflectances of X-rays on a film, extracting interference oscillations from the measured X-ray reflectances, and Fourier transforming the interference oscillations to compute a film thickness of the film, an average reflectance being given by fitting the measured X-ray reflectances to an analysis formula including a term of a product of a power function of an incident angle, which expresses attenuation of reflectances on a smooth surface of the film and an exponent function which expresses influence of roughness of the surface of the film, and a constant term expressing a background added to the product; the interference oscillations being given by using the measured X-ray reflectances and the average reflectance. The film thickness measuring method can extract interference oscillations of a reflectance curve by a method including arbitrariness and by a simple procedure.

Film thickness measuring and film forming method

A radiation detecting device comprises a substrate, a first superconductor layer formed on the substrate, a barrier layer formed on the first superconductor layer, and a second superconductor layer formed on the barrier layer, a junction formed of the first superconductor layer, the barrier layer and the second superconductor layer receiving radiation for detection thereof, the first superconductor layer being a Ta layer, the barrier layer including a TaOx layer, an AlOx layer, a HfOx layer or a ZrOx layer, and the second superconductor layer being a Ta layer. A underlayer of Nb, V, W, Hf, Zr or Ti having a lattice constant approximate to that of Ta is formed directly below the first superconductor layer. A underlayer of V, W or Ti having a lattice constant approximate to that of Ta is formed directly below the second superconductor layer. An opening is formed in the substrate and the radiation stopping layer directly below the junction, radiation being incident to the junction through the opening.

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Kawasaki, Japan

Satoshi Komiya