Shin-Etsu Chemical Co., Ltd.

Satoshi Asai

Hideto Kato

Kyoko Soga

Yoshinori Hirano

Katsuya Takemura

Michihiro Sugo

Kazunori Kondo

Kazuhiro Arai

Takanobu Takeda

Toshihiko Fujii

Takahiro Goi

Hideyoshi Yanagisawa

Kazumi Noda

Kazumasa Tsukioka

Provided is a photosensitive resin composition which comprises (A) a polymer comprising repeating units represented by formula (A1) and at least one kind of repeating units selected from among repeating units represented by formula (A2) and repeating units represented by formula (A3), (B) an epoxy compound containing four or more epoxy groups on average in the molecule, (C) a photoacid generator, (D) a benzotriazole compound and/or an imidazole compound, and (E) an organic solvent.

Photosensitive resin composition, photosensitive dry film, and pattern formation method

A photosensitive resin composition comprising a polymer containing a silphenylene skeleton and a fluorene skeleton and having a crosslinkable site in the molecule, a phenol compound having a Mw of 300-10,000, a photoacid generator, and a benzotriazole or imidazole compound has improved film properties. Even from a thick film, a fine size pattern can be formed.

Photosensitive resin composition, photosensitive dry film, and pattern forming process

To provide a laminate which enables pattern formation with excellent opening shape even in the case where a chemically amplified negative type resist material is used, and a pattern forming method in which the laminate is used. The laminate includes a chemically amplified negative type resist layer, and a basic resin coat layer thereon that contains 0.001 to 10% by weight of a basic compound having a molecular weight of up to 10,000.

Laminate and pattern forming method

A chemically amplified positive resist composition is provided comprising (A) a polymer adapted to tarn soluble in alkaline aqueous solution under the action, of acid, (B) a photoacid generator, (C) a car boxy lie acid, and (D) a benzotriazole compound and/or an imidazole compound. When the resist composition is coated on a copper substrate as a thick film of 5-250 &#x3bc;m thick and lithographically processed into a pattern, a high resolution is available and the pattern is of rectangular profile.

Chemically amplified positive resist composition and pattern forming process

A laminate comprising a thermoplastic film and a positive resist film is provided, the positive resist film comprising (A) a novolak resin-naphthoquinone diazide (NQD) base resin composition, (B) a polyester, and (C) 3-30 wt % of an organic solvent. The resist film may be transferred to a stepped support without forming voids.

Positive resist film laminate and pattern forming process

A laminate comprising a thermoplastic film and a chemically amplified positive resist film thereon is provided, the resist film comprising (A) a base polymer having a hydroxyphenyl group and a protective group, the polymer turning alkali soluble as a result of the protective group being eliminated under the action of acid, (B) a photoacid generator, (C) an organic solvent, and (D) a polymer having an ester bond in its backbone. The resist film may be transferred to a stepped support without forming voids.

Chemically amplified positive resist film laminate and pattern forming process

A film material includes a support film having a transmittance of at least 60% with respect to light of wavelength 300-450 nm, and a resin layer containing 0.001-10 wt % of a basic compound with a molecular weight of up to 10,000, and having a thickness of 1-100 &#x3bc;m. A pattern is formed by attaching the resin layer in the film material to a chemically amplified negative resist layer on a wafer, exposing, baking, and developing the resist layer. The profile of openings in the pattern is improved.

Film material and pattern forming process

A method for manufacturing a semiconductor apparatus, including preparing a first substrate provided with a pad optionally having a plug and a second substrate or device provided with a plug, forming a solder ball on at least one of the pad or plug of first substrate and the plug of second substrate or device, covering at least one of a pad-forming surface of first substrate and a plug-forming surface of second substrate or device with a photosensitive insulating layer, forming an opening on the pad or plug of the substrate or device that has been covered with photosensitive insulating layer by lithography, pressure-bonding the second substrate or device's plug to the pad or plug of first substrate with the solder ball through the opening, electrically connecting pad or plug of first substrate to second substrate or device's plug by baking, and curing photosensitive insulating layer by baking.

Method for manufacturing semiconductor apparatus, method for manufacturing flip-chip type semiconductor apparatus, semiconductor apparatus, and flip-chip type semiconductor apparatus

A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.

Semiconductor apparatus, stacked semiconductor apparatus, encapsulated stacked-semiconductor apparatus, and method for manufacturing the same

A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.

Semiconductor apparatus, stacked semiconductor apparatus and encapsulated stacked-semiconductor apparatus each having photo-curable resin layer

A chemically amplified positive resist dry film to be formed on a support film contains 5-40 wt % of a component having a boiling point of 55-250&#xb0; C. under atmospheric pressure. The resist dry film having flexibility and dimensional stability can be prepared through simple steps. The resist dry film can be efficiently and briefly laid on an article and processed to form a pattern.

Chemically amplified positive resist dry film, dry film laminate and method of preparing laminate

The present invention is a photo-curable resin composition containing (A) a silicone polymer compound having repeating units shown by the formulae (1) and (2), (B) a photosensitive acid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm, (C) one or more compounds selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol, a phenol compound having on average two or more methylol groups or alkoxymethylol groups per molecule, and a polyhydric phenol compound whose phenolic hydroxyl group is substituted with a glycidoxy group, and (D) one or more compounds selected from polyhydric phenols having 3 or more hydroxyl groups. As a result, there is provided a photo-curable resin composition that can facilitate thick and fine patterning when the composition is used in patterning. 

Photo-curable resin composition and photo-curable dry film using the same

The present invention is a semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first photosensitive insulating layer formed on the semiconductor device, and a second photosensitive insulating layer formed on the first photosensitive insulating layer, in which the first and second photosensitive insulating layers are composed of a photo-curable resin composition containing a silicone polymer compound having an epoxy group-containing repeating unit shown by formula (1) and a phenolic hydroxyl group-containing repeating unit shown by formula (2), a photosensitive acid generator, a solvent, and crosslinking agents. There can be provided a semiconductor apparatus that can be easily placed on a circuit board and stacked by forming a fine electrode on the semiconductor device and providing a through electrode outside the semiconductor device. 

A chemically amplified negative resist composition comprising a silicone structure-bearing polymer forms a film which can be readily patterned. The patterned film is tightly adherent to various substrates and suited as protective film on electric/electronic parts because of improved alkali resistance and reliability.

Chemically amplified negative resist composition, photo-curable dry film, making method, patterning process, and electric/electronic part-protecting film

A photo-curable resin composition comprising a silicone-containing polymer, a photobase generator, a solvent, and optionally an epoxy resin crosslinker forms a coating which serves as a protective film for the protection of electric/electronic parts.

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Annaka, Japan

Satoshi Asai