Ulvac, Inc.

Satoru Toyoda

Harunori Ushikawa

Kyuzo Nakamura

Tomoyasu Kondo

Narishi Gonohe

Masamichi Harada

Junichi Hamaguchi

Kazumasa Horita

Shuji Kodaira

Koukichi Kamada

Yoshiyuki Kadokura

Shoichiro Kumamoto

Tetsuji Kiyota

Tomoyuki Yoshihama

Shigeo Nakanishi

Hisaharu Obinata

A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Film formation apparatus

A Co film is formed by supplying cobalt alkylamidinate, and a combined gas containing Hgas with at least one member selected from the group consisting of NH, NH, NH(CH), NHCH, and Nas a reducing gas, or at least one gas selected from the group consisting of NH, NH, NH(CH), NHCH, and Nas a reducing gas, on the surface of a base material, which consists of an SiOfilm or a barrier film serving as a primary layer. A Cu interconnection film is formed on the surface of the Co film.

Method for the formation of Co film and method for the formation of Cu interconnection film

A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N&#x2550;(R, R') (wherein, R and R&#x2032; each represents an alkyl group having 1 to 6 carbon atoms) and NHgas into a film-forming chamber; reacting the raw gas with the NHgas; forming a reduced compound having Ta&#x2014;NHon a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.

Method for forming tantalum nitride film

A tantalum nitride film-forming method comprises the steps, according to the CVD technique, of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N&#x2550;(R, R') (in the formula, R and R&#x2032; may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and a halogen gas into a film-forming chamber to thus form a film of a halogenated compound represented by the following general formula: TaN(Hal)(R, R&#x2032;)(in the formula, Hal represents a halogen atom), reacting the halogenated compound film with a hydrogen atom-containing gas by the introduction thereof into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N, and a high compositional ratio: Ta/N, can ensure high adherence to the electrical connection-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.

A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N&#x2550;(R,R') (in the formula, R and R&#x2032; may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaN(Hal)(R, R&#x2032;)(in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta&#x2014;N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R&#x2032;) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.

A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N&#x2550;(R,R') (in the formula, R and R&#x2032; may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NHgas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R&#x2032;) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.

A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1&times;10,Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.

Growing community of inventors

Shizuoka-ken, Japan

Satoru Toyoda