Tokyo Electron Limited

Satoru Teruuchi

Daisuke Hayashi

Katsuyuki Koizumi

Dai Kitagawa

Tsutomu Nagai

Kazuya Nagaseki

Shinji Himori

Jun Hirose

Takari Yamamoto

Kenichiro Nakamura

Kenichiro Yamada

A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.

Plasma monitoring system, plasma monitoring method, and monitoring device

A substrate processing system includes a substrate processing apparatus and a control device. The substrate processing apparatus includes a chamber, and a placing table provided inside the chamber. The placing table places a substrate thereon, and includes a base and an electrostatic chuck provided on an upper surface of the base. The electrostatic chuck has a plurality of division regions each provided with a heater therein. The substrate processing system also includes a control device that includes a measuring unit that measures a resistance value of the heater for each of the division regions, an estimating unit that estimates a temperature of each of the division regions based on the resistance value of the heater measured by the measuring unit, and a power controller that controls a power supplied to the heater for each of the division regions based on the temperature estimated by the estimating unit.

Substrate processing system and temperature control method

A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.

Placing table and plasma treatment apparatus

A plasma processing apparatus according to an embodiment includes a processing container, a mounting table, a plurality of heaters, and a power supply device. The mounting table is provided in the processing container. The plurality of heaters are provided in the mounting table. The power supply device supplies electric power to the plurality of heaters. The power supply device includes a plurality of transformers and a plurality of zero-cross control type solid state relays (SSRs). The plurality of transformers are configured to step down a voltage from an alternating-current power source. Each of the plurality of transformers includes a primary coil and a secondary coil. The primary coil is connected to the alternating-current power source. Each of the plurality of SSRs is provided between one corresponding heater among the plurality of heaters and the secondary coil of one corresponding transformer among the plurality of transformers.

Plasma processing apparatus, method of operating plasma processing apparatus, and power supply device

Growing community of inventors

Miyagi, Japan

Satoru Teruuchi