Tokyo Electron Limited

Osaka University

Satoru Shimura

Fumiko Iwao

Kousuke Yoshihara

Masami Yamashita

Hidetami Yaegashi

Junichi Kitano

Takayuki Katano

Hidefumi Matsui

Tetsu Kawasaki

Hiroyuki Iwaki

Yo Suzuki

Toru Aoyama

Masashi Enomoto

Seiji Nagahara

Shinichiro Kawakami

Gousuke Shiraishi

Masaru Tomono

Takahiro Kitano

Taro Yamamoto

Takehiko Orii

Mitsuaki Iwashita

Naruaki Iida

Yuji Matsuyama

Hideharu Kyouda

Ryuichi Asako

Kazuhiro Kubota

Yuichi Terashita

Itaru Kanno

Masatoshi Deguchi

Keiji Tanouchi

Akihiro Oshima

Takashi Hayakawa

Miyako Kaneko

Seiichi Tagawa

Soichiro Okada

Hironori Mizoguchi

Seiichi Takayama

A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, making a determination of which one of a first treatment and a second treatment to perform based on the treatment object substrate. In response to the determination determining to perform the first treatment, performing the first treatment of decreasing a polarity of the base film to bring it closer to a polarity of the resist solution. In response to the determination determining to perform the second treatment, performing a treatment of increasing the polarity of the base film to bring it closer to the polarity of the resist solution.

Substrate treatment method and substrate treatment system

A method for cleaning a substrate includes setting a substrate inside a cleaning chamber, supplying on a surface of the substrate a treatment solution which includes a volatile component and forms a treatment film, vaporizing the volatile component of the treatment solution supplied on the surface of the substrate such that the treatment solution solidifies or is cured on the surface of the substrate and the treatment film is formed on the surface of the substrate, and supplying onto the treatment film formed on the surface of the substrate a removal solution which removes the treatment film.

Substrate cleaning apparatus, substrate cleaning system, substrate cleaning method and memory medium

A film forming system is to form an organic film on a substrate having a pattern formed on a surface thereof, includes: an organic film formation section configured to perform an organic film formation treatment on the substrate to form the organic film on the substrate; a film thickness measurement section configured to measure a film thickness of the organic film on the substrate; and an ultraviolet treatment section configured to perform an ultraviolet irradiation treatment on the organic film on the substrate to remove a surface of the organic film. In the film forming system, the organic film formation section, the film thickness measurement section, and the ultraviolet treatment section are disposed side by side in this order along a transfer direction of the substrate.

Film forming system, film forming method, and computer storage medium

A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Exposure apparatus, resist pattern forming method, and storage medium

A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Substrate treatment system

The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.

Film forming method, computer storage medium, and film forming system

In the present invention, photolithography processing is performed on a substrate to form a resist pattern over the substrate, and a treatment agent is caused to enter a side surface of the resist pattern and metal is caused to infiltrate the side surface of the resist pattern via the treatment agent, the formed resist pattern has a high etching selection ratio with respect to a film to be treated on the substrate so as to suppress a so-called pattern collapse, therefore.

Substrate treatment method, non-transitory computer storage medium and substrate treatment system

To appropriately form a metal-containing film containing metal on a substrate, a method first forms an organic film on the substrate, and causes a treatment agent to enter the organic film and causes metal to infiltrate the organic film via the treatment agent, thereby forming the metal-containing film. The metal-containing film contains metal and thus has a high etching selection ratio that is originally required performance. This makes it possible to appropriately form the metal-containing film having a high etching selection ratio on the substrate.

Film forming method, non-transitory computer storage medium and film forming apparatus

The present invention includes: a resist film forming step of forming a resist film over a substrate; an exposure step of exposing the resist film into a predetermined pattern; a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist film and causing metal to infiltrate the exposed portion via the treatment agent; and a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a resist pattern over the substrate.

In the present invention, a masking solution is supplied to an edge portion of a front surface of a substrate rotated around a vertical axis to form a masking film at the edge portion of the substrate, a hard mask solution is supplied to the front surface of the substrate to form a hard mask film on the front surface of the substrate, a hard mask film removing solution dissolving the hard mask film is supplied to the hard mask film formed at the edge portion of the substrate to remove the hard mask film formed at the edge portion of the substrate, and a masking film removing solution dissolving the masking film is supplied to the masking film to remove the masking film at the edge portion of the substrate.

Coating treatment method and coating treatment apparatus

A pattern forming method for forming a pattern serving as a mask, includes a process for forming a first pattern, a process for trimming a width of the first pattern, a process for forming a boundary layeron a surface of the first pattern, a process for forming a second mask material layeron a surface of the boundary layer, a process for removing a part of the second mask material layerto expose top portions of the boundary layer, and a process for exposing the first patternand forming a second pattern having the second mask material layerat a top portion thereof by etching the boundary layer

Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus

Provided is a pattern forming method for forming a pattern serving as a mask, which includes: a process for forming a first patternmade of a photoresist; a process for forming a boundary layerat sidewall portions and top portions of the first pattern; a process for forming a second mask material layerto cover a surface of the boundary layer; a process for removing a part of the second mask material layerto expose top portions of the boundary layer; a process for forming a second pattern made of the second mask material layerby etching and removing the boundary layer; and a trimming process for reducing a width of the first patternand a width of the second pattern to predetermined widths.

A method of manufacturing a semiconductor device includes: forming a resist layer on an underlayer, forming an exposed pattern in the resist layer, wherein the exposed pattern comprises a soluble layer and an insoluble layer, forming a resist pattern by removing the soluble layer from the resist layer in which the exposed pattern is formed, removing an intermediate exposed area from the resist pattern, forming a new soluble layer in a surface of the resist pattern from which the intermediate exposed area is removed by applying a reaction material to the resist pattern from which the intermediate exposed area is removed, wherein the reaction material generates a solubilization material that solubilizes the resist pattern, and removing the new soluble layer from the resist pattern.

Method of manufacturing semiconductor device, and resist coating and developing system

In a semiconductor device manufacturing method, an etching mask () having a predetermined opening pattern is formed on an etching target film () disposed on a target object. Then, an etching process is performed on the etching target film () through the opening pattern of the etching mask () within a first process chamber, thereby forming a groove or hole () in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (), which is an exposed portion of the etching target film (), within the second process chamber.

Apparatus for manufacturing a semiconductor device

A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction.

Growing community of inventors

Nirasaki, Japan

Satoru Shimura