Jsr Corporation

Kabushiki Kaisha Toshiba

Toshiba Infrastructure Systems & Solutions Corporation

Satoru Murakami

Shin-ya Minegishi

Kyoyu Yasuda

Shinya Nakafuji

Yushi Matsumura

Kazuhiko Komura

Shin-ya Nakafuji

Makoto Sugiura

Takanori Nakano

Toru Kimura

Nobuyuki Yagi

Masayuki Motonari

Shinya Minegishi

Yoshio Takimoto

Takafumi Nakahama

Yusuke Anno

Yuushi Matsumura

Katsuhisa Mizoguchi

Kazuhiko Koumura

Kei Yasumuro

A composition for forming a resist underlayer film includes (A) a compound. The compound (A) includes a group represented by formula (1). R represents a monovalent organic group having 1 to 30 carbon atoms. The monovalent organic group represented by R does not include an oxygen atom at an end of the side adjacent the sulfur atom. * represents a bonding hand. The compound (A) preferably includes a ring which is an aromatic ring, a heteroaromatic ring, or a combination thereof. The bonding hand denoted by * in the group represented by the formula (1) is preferably linked directly or via an oxygen atom to the ring. 

Composition for forming resist underlayer film

A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Arand Areach independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask. 

Method for forming pattern, and composition for forming resist underlayer film

A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *&#x2014;COO&#x2014; or &#x2014;NR&#x2014;. Rrepresents a hydrogen atom or a Cmonovalent hydrocarbon group. Rrepresents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a Cmonovalent hydrocarbon group, a Cmonovalent oxyhydrocarbon group or a Cmonovalent sulfanilhydrocarbon group. p is an integer of 1 to 3. 

Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method

Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

Pattern-forming method, and composition for forming resist underlayer film

Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask. 

Method for pattern formation, method and composition for resist underlayer film formation, and resist underlayer film

A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of Rto Rindependently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of Rto Rrepresents the group shown by the formula (2). 

Resist underlayer film-forming composition and method for forming pattern

According to one embodiment, an electric motor includes a stator, a rotor, bearings and a rotor shaft, in a frame, supporting surfaces on the rotor, and a plurality of threaded holes in the frame, which are configured to receive bolts for pressing the support surfaces from outside.

Electric motor having support surfaces for maintenance

A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Pattern-forming method, resist underlayer film, and composition for forming resist underlayer film

A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of Rto Rindividually represent a group shown by the following formula (2) or the like. Rrepresents a single bond or the like. Rrepresents a hydrogen atom or the like. 

Resist underlayer film-forming composition

A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein Rto Rindividually represent a group shown by the following formula (2) or the like,&#x2014;O&#x2014;R&#x2261;R&#x2003;&#x2003;(2)wherein Rrepresents a single bond or the like, and Rrepresents a hydrogen atom or the like.

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Tokyo, Japan

Satoru Murakami