Tokyo Electron Limited

Other

Fuji Electric Co., Ltd.

Tohoku University

Tokyo Electron Kabushiki Kaisha

Sinfonia Technology Co., Ltd.

Satoru Kawakami

Taro Ikeda

Masaki Hirayama

Nobuo Ishii

Kazushi Kaneko

Toshihiko Iwao

Toshiaki Hongoh

Mitsuhiro Yuasa

Makoto Toraguchi

Hiroyuki Onoda

Yoshinobu Kawai

Yoko Ueda

Tsuyoshi Moriya

Tatsuo Matsudo

Jun Yamawaku

Mitsuaki Komino

Sumi Tanaka

Eiki Kamata

Yoichi Deguchi

Yoichi Ueda

Shigemi Murakawa

Yasuhiro Tobe

Youichi Deguchi

Shinji Matsubayashi

Hiroyuki Yamamoto

Masaru Hori

Naohito Yamada

Kiyotaka Ishibashi

Ryusuke Ushikoshi

Shuji Moriya

Masahiro Ogasawara

Issei Imahashi

Kenji Ishikawa

Yoshifumi Tahara

Susumu Tanaka

Munehito Kagaya

Tetsuya Kawajiri

Atsushi Kubo

Toshio Goto

Yusuke Suzuki

Hideaki Amano

Masafumi Ito

Tetsu Oosawa

Tadashi Mitsunari

Shinya Iwashita

Kiyoshi Mori

Katsuhiko Iwabuchi

Yosuke Muraguchi

Shiro Koyama

Yasumichi Mieno

Takahiro Hirano

Toshifumi Kitahara

Jun Yashiro

Yasuyoshi Kitazawa

Takumi Kabe

Tsuyoshi Suzuki

Ryo Kuwajima

Junichi Arami

Kenta Kato

A dividing plate has insulating properties, and divides the inside of a processing vessel into a reaction chamber in which a body to be processed is placed, and a plasma generating chamber for generating plasma. Further, the dividing plate is provided, on a surface thereof on the side of the plasma generating chamber, with a first electrode, and a plurality of through holes for supplying active species included in the plasma generated in the plasma generating chamber to the reaction chamber. The second electrode is disposed facing the first electrode in the plasma generating chamber. When plasma is to be generated in the plasma generating chamber, an electric power supply unit supplies either the first electrode or the second electrode with high-frequency electric power in which high-frequency electric power in a plurality of frequencies is superimposed by phase control.

Plasma processing device, and plasma processing method

There is provided a plasma source comprising a first chamber configured to form a flat first plasma generation space, and having a first wall and a second wall, a gas supply configured to supply gas into the first chamber, an electromagnetic wave supply having a dielectric window that is provided in an opening provided in the first wall to face the first plasma generation space, and configured to supply an electromagnetic wave through the dielectric window into the first chamber. The plasma source comprises a plasma supply configured to supply radicals contained in plasma that is generated from the gas supplied into the first chamber by the electromagnetic wave to an outside of the first chamber, and a plasma ignition source provided in the first chamber to protrude from an inner wall of the second wall facing the dielectric window and to be separated from the dielectric window.

Plasma source and plasma processing apparatus

A plasma processing apparatus includes: a processing container including a substrate support; a shower head that supplies active species of a first gas into the processing container; a first dissociation space through which the active species is supplied to the shower head; and a resonator that supplies electromagnetic waves in a VHF band or higher to the first dissociation space. The resonator includes: a cylindrical body; a gas pipe which passes through an interior of the cylindrical body, is provided along a central axis direction of the cylindrical body, and includes gas holes through which the first gas is supplied into the first dissociation space; and a dielectric window including a central portion through which the end portion of the gas pipe passes, and configured to seal a space between the gas pipe and the cylindrical body and cause the electromagnetic waves to transmit through the first dissociation space.

Plasma processing apparatus

In a plasma processing apparatus and a plasma processing method, improvement of the in-plane uniformity of plasma on a stage is required. The plasma processing apparatus includes a processing container, a stage, and a dielectric plate. The stage is provided within the processing container, the dielectric plate includes a plurality of through-holes for gas injection, and an upper surface of the dielectric plate is provided with a conductive film. A space between the conductive film and the stage within the processing container is used as a plasma processing space. The dielectric plate has a central portion and an outer peripheral portion, upper surfaces of the central portion and the outer peripheral portion include flat portions, and the central portion is larger in thickness than the outer peripheral portion.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus comprises a processing chamber accommodating a substrate, and defining a processing space by an upper wall, a side wall, and a lower wall, a microwave generator configured to generate a microwave for generating plasma, a plurality of microwave radiators provided above the upper wall, and configured to radiate the microwave toward the processing chamber, a plurality of microwave transmission windows provided at positions corresponding to the plurality of microwave radiators in the upper wall, and formed of a dielectric, and a plurality of resonator array structures disposed on lower surfaces of the plurality of microwave transmission windows, respectively. The resonator array structures are formed by arranging a plurality of resonators that are capable of resonance with a magnetic field component of the microwave and are smaller in size than a wavelength of the microwave.

In a plasma processing apparatus, a processing chamber is provided. First electrodes are disposed inside the processing chamber and supplied with radio frequency powers. The second electrode is disposed inside the processing chamber and functions as a counter electrode for the first electrodes. The power supply source supplies radio frequency powers to the first electrodes to generate plasma between the first electrodes and the second electrode and process a target object using the plasma. The allocation setting unit is disposed between the power supply source and at least one of the first electrodes to set power allocations of the radio frequency powers to be supplied to the first electrodes. Further, the allocation setting unit has series circuits in each of which an impedance circuit and a switching element are connected in series. The series circuits are connected in parallel. The control device controls the switching elements in the series circuits.

A plasma processing apparatus includes a stage provided in a processing container, and an upper electrode. The upper electrode includes a dielectric plate facing the stage, and a conductor formed on a surface of the dielectric plate opposite to a surface of the dielectric plate facing the stage. The dielectric plate includes a central portion, an outer peripheral portion, and an intermediate portion between the central portion and the outer peripheral portion. The intermediate portion has a thickness larger than the thicknesses of the central portion and the outer peripheral portion.

This plasma processing apparatus for performing plasma processing on an end part of a substrate includes a processing container, a substrate supporting member configured to support a portion of the substrate and to which a high frequency power is applied, at least a side of the substrate supporting member being composed of a dielectric, an opposing dielectric member composed of a dielectric and disposed to oppose the substrate supporting member, and a gas supply configured to supply a processing gas for generating plasma on at least the end part of the substrate. The plasma processing apparatus further includes a side ground electrode provided at a side of the substrate so as to be close to the substrate to such an extent that an electrical coupling is formed between an end surface of the substrate and the side ground electrode, the side ground electrode having a ground potential.

A plasma processing apparatus includes: a shower head provided above a substrate supporter; a gas supply pipe extending vertically above a chamber to be connected to an upper center of the shower head; an introducer through which the gas supply pipe passes and into which an electromagnetic wave of a VHF or higher is introduced to activate a gas; and an electromagnetic-wave supply path connected to the gas supply pipe. The introducer has a first dissociation space arranged upstream of the shower head and to which a first gas is supplied. The chamber has a second dissociation space between the substrate supporter and the shower head. The first gas dissociated in the first dissociation space and a second gas from the gas supply pipe are joined in the second dissociation space where they are dissociated by a radio-frequency wave having a frequency lower than that of the electromagnetic wave.

A plasma processing apparatus for cleaning a peripheral portion of a substrate by plasma and comprising a depressurizable processing container accommodating a substrate is disclosed. The processing container includes a substrate support for supporting a substrate and including a central electrode facing a central portion of the supported substrate supported by the substrate support; a lower ring electrode formed in a ring shape to face a lower surface of a peripheral portion of the substrate supported by the substrate support; and an upper ring electrode disposed to face an upper surface of the peripheral portion of the substrate supported by the substrate support. The central electrode is grounded, a radio frequency (RF) power is supplied to each of the upper and lower ring electrodes, and the RF power is supplied to at least one of the upper and lower ring electrodes via a phase adjuster configured to adjust the phase of the RF power.

Plasma processing apparatus, and plasma processing method

A substrate processing apparatus includes a vacuum processing container and a rotation arm including a rotary axis disposed at a central portion of the vacuum processing container, wherein, in the rotation arm, a rotation cylinder having a hollow interior constitutes the rotary axis, and a hollow portion of the rotation cylinder constitutes an exhaust path of the vacuum processing container.

Substrate processing apparatus

In a shower plate, a plasma processing apparatus, and a plasma processing method, improvement of in-plane uniformity of plasma on a stage is required. The shower plate according to an exemplary embodiment includes an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric. A distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion than in a central portion.

Shower plate, plasma processing apparatus and plasma processing method

A shower plate includes a plate-shaped dielectric main body having gas holes, and a plurality of sealed areas formed in the dielectric main body. Each of the sealed areas has a permittivity lower than a permittivity of the dielectric main body. A volume density of the sealed areas at a central region of the dielectric main body is higher than a volume density of the sealed areas at a peripheral region of the dielectric main body.

Shower plate, lower dielectric member and plasma processing apparatus

There is provided a plasma processing device. The plasma processing device comprises: a processing chamber; a partition plate that has an insulating property, and configured to partition a space in the processing chamber into a reaction chamber in which an object to be processed is mounted and a plasma generating chamber in which plasma is generated, wherein a first electrode is provided on a surface of the partition plate on the side of the plasma generating chamber, and the partition plate has a plurality of through holes formed for supplying active species contained in the plasma generated in the plasma generating chamber to the reaction chamber; a second electrode disposed in the plasma generating chamber so as to face the first electrode; and a power supply configured to supply high-frequency power obtained by phase-controlling and superimposing high-frequency powers of a plurality of frequencies to one of the first electrode and the second electrode when the plasma is generated in the plasma generating chamber.

A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

Plasma processing apparatus and lower stage

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Sagamihara, Japan

Satoru Kawakami