Ulvac, Inc.

Nihon Shinku Gijutsu Kabushiki Kaisha

Mitsubishi Materials Corporation

Satoru Ishibashi

Satoru Takasawa

Noriaki Tani

Hirohisa Takahashi

Sadayuki Ukishima

Kyuzo Nakamura

Tadashi Masuda

Masaki Takei

Haruhiko Yamamoto

Isao Sugiura

Yoshifumi Ota

Yasushi Higuchi

Junya Kiyota

Atsushi Ota

Hiroaki Katagiri

Masanori Shirai

Satoshi Ikeda

Takashi Komatsu

Hajime Nakamura

Makoto Arai

Toshihiro Suzuki

Motoshi Kobayashi

Kouichi Hanzawa

Takafumi Matsumoto

Yasuhiko Akamatsu

Junichi Nitta

Yuzo Murata

Hiroaki Kawamura

Masasuke Matsudai

Satoshi Okabe

Masahide Matsubara

Atsushi Ohta

Shigemitsu Sato

Hiroki Oozora

Yuuichi Oishi

Shuhei Ichikawa

Tomiyuki Yukawa

A mounting device in which a conductive film that is not separated is formed on a resin substrate. Alloy thin films, which contain more than 50% by atom of Cu, 5% by atom or more and 30% by atom or less of Ni, and 3% by atom or more and 10% by atom or less of Al, are formed on a base consisting of a resin so as to be brought into contact with a surface of the base by sputtering. Conductive films consisting of copper are formed on surfaces of the alloy thin films so as to obtain a wiring film having a two-layer structure and a metal plug filled in a connection hole. The alloy thin films have high adhesion to a resin; and hence, the wiring film and the metal plug are not separated.

Mounting device and method of manufacturing the same

A sputtering apparatus with high usage efficiency of a target is provided. A sputtering apparatus of the present invention includes first and second ring magnets, first and second magnet members arranged inside a ring of the first and second ring magnets, wherein in the first and second ring magnets and the first and second magnet members, magnetic poles with the same magnetism are faced toward the rear surface of a first and a second targets. Thus, in the rear surface of the first and second targets, the magnetic poles with the same polarity are adjacently arranged, and the absolute value of the strength of horizontal magnetic field components formed in the surfaces of the first and second targets becomes small and the strength distribution becomes narrow, and the strength of vertical magnetic field components becomes uniform; and consequently, a non-erosion portion is not produced in the first and second targets.

Sputtering apparatus

A sputtering apparatus for ensuring high target utilization efficiency is provided. The sputtering apparatusof the present invention comprises a moving meansso that first and second magnet memberscan be moved by the moving meansin planes parallel to the surfaces of first and second targets. When the first and second magnet membersmove, magnetic field lines as well as deeply eroded regions on the surfaces of the first and second targetsalso move, whereby large areas on the surfaces of the first and second targetsare sputtered.

Sputtering apparatus and film-forming processes

Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.

Method for producing a thin film transistor, and a thin film transistor

A manufacturing method for a solar cell including an upper electrode extracting an electrode at an incident light side, the upper electrode including a transparent conductive film, a basic structural element of the transparent conductive film being any one of an indium (In), a zinc (Zn), and tin (Sn), the manufacturing method including: a step A forming a texture on a front surface of a transparent substrate using a wet etching method, the transparent conductive film being formed on the transparent substrate, wherein in the step A, when the texture is formed, a metal thin film is formed on the transparent substrate, and an anisotropic etching is performed with the metal thin film being a mask.

Manufacturing method for solar cell

A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film.

Method for manufacturing solar cell, etching device, and CVD device

Provided is an electrode layer and a wiring layer, which are free from peeling from a glass substrate. A wiring layer and a gate electrode layer are constituted by an adhering film which is a thin film made of Cu&#x2014;Mg&#x2014;Al formed on a surface of a glass substrate, and a copper film formed on the adhering film. When the adhering film includes Mg in a range of at least 0.5 atom % and at most 5 atom %, and aluminum in a range of at least 5 atom % and at most 15 atom %, assuming that the total number of atoms of copper, magnesium and aluminum is taken as 100 atom %, adhesion of the adhering film to the glass substrate becomes high, and the copper thin film is not peeled from the glass substrate. The wiring layer is electrically connected to a pixel electrode of a liquid crystal display device.

Wiring layer, semiconductor device and liquid crystal display device

An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film, which is a thin film of Cu&#x2014;Mg&#x2014;Al and a copper thin film; and the high-adhesion barrier filmis brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier filmcontains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse.

Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device

A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

Method for producing thin film transistor and thin film transistor

The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.

Magnetron sputtering apparatus and magnetron sputtering method

A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.

Method for forming wiring film, transistor and electronic device

A highly durable touch panel is provided. A touch panel according to the present invention includes a deformable flexible panel, and a transparent electrode film containing InOas a primary component and containing Ti is exposed to a surface of a lower electrode film of a display device. Since such a transparent electrode film has a high abrasion resistance as compared to a conventional one (such as, an ITO thin film), the transparent electrode film is neither clouded nor cracked even if the lower electrode film is repeatedly pressed. Therefore, the touch panel according to the present invention is highly durable.

Touch panel, and method for manufacturing touch panel

A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.

Touch panel

A sputtering apparatus according to the present invention is provided with first to fourth targets. The first and the second targets are disposed so that their surfaces face each other. The third and the fourth targets are also disposed so that their surfaces face each other. When a dielectric film is formed, sputtering is alternately performed on the first and the second targets and on the third and the fourth targets. When sputtering is performed on two of the targets having surfaces that face each other, the remaining two targets function as a ground. As a result, abnormal discharges are inhibited.

Sputtering device and film forming method

A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.

Growing community of inventors

Sammu, Japan

Satoru Ishibashi