Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Nippon Telegraph and Telephone Corporation

Satomi Inoue

Shigeru Nakamoto

Daisuke Shiraishi

Akira Kagoshima

Tatehito Usui

Kousuke Fukuchi

Ryoji Asakura

Seiichi Watanabe

Toshihiro Morisawa

Kosa Hirota

Keita Nogi

Hiroshi Osawa

Masayuki Nishiki

Takeshi Ohmori

Masahito Togami

Takayuki Fujiwara

Teruo Nakata

Michinori Kawaguchi

Kenji Maeda

Masahiro Sumiya

Shoji Ikuhara

Satoshi Nishiyama

Shota Umeda

Nanako Tamari

Kousa Hirota

Yoshiro Suemitsu

Daisuke Satou

Koichi Nakaune

Kenji Tamaki

Yohei Kawaguchi

Soichiro Eto

Takeaki Nishioka

Yuji Nagatani

Hao Xu

Hiroshige Uchida

A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

Plasma processing apparatus, plasma processing method and plasma processing analysis method

An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

Plasma processing method

The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

Plasma processing apparatus and plasma processing system

when packets are received via any one of the plurality of inflow VRFs provided for respective route patterns, a chaining edge router () redirects the packets to a chain VRF corresponding to the inflow VRF. The chaining edge router () transfers the packets redirected to the chain VRF to respective functions via a communication path constructed using a VLAN in advance according to a route pattern corresponding to the chain VRF.

Communication system and communication method

A control system () includes, for each type of Virtual Network Function (VNF), a VNF compatibility condition indicating a condition of allocation of resources by which the VNF corresponding to the type is allowed to coexist with other VNFs in an identical computer, and resource usage information indicating resources in use by the VNF in the computer and unused resources. The control system () includes a VNF deploy control unit () referencing, in a case of receiving an instruction to additionally install a VNF, the type of the VNF to be additionally installed, the VNF compatibility condition, and the resource usage information to determine, from among the unused resources, resources allocated to the VNF to be additionally installed, and a resource allocation processing unit allocating the determined resources to the VNF to be additionally installed.

Control device and control method

According to an embodiment of the present invention, a plasma processing apparatus includes: a processing chamber in which plasma processing is performed to a sample; a radio frequency power source that supplies radio frequency power for generating plasma in the processing chamber; and a data processing apparatus that performs processing to light emission data of the plasma. The data processing apparatus performs the processing to the light emission by using an adaptive double exponential smoothing method for varying a smoothing parameter based on an error between input data and a predicted value of smoothed data. A response coefficient of the smoothing parameter is derived by a probability density function including the error as a parameter.

Plasma processing apparatus, data processing apparatus and data processing method

A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

Plasma processing apparatus and operational method thereof

According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

Plasma processing apparatus and analysis method for analyzing plasma processing data

A communication system includes a flow collector that collects traffic of an NW edge accommodating CPE, an NFVO that provides an instruction to add or remove a resource of a VNF, a resource management device that notifies the NFVO of an increased or decreased resource amount and an addition or removal instruction of the VNF based on an increase or decrease of the traffic of the NW edge collected by the flow collector, and that decides on the VNF which becomes a redirection destination of the traffic of the NW edge in response to execution of addition or removal of the VNF by the NFVO, a VIM that adds or removes the VNF in accordance with an instruction from the NFVO, and a flow controller that instructs the NW edge to set the VNF decided by the resource management device as the redirection destination of the traffic.

The present invention is a data processing apparatus including a data input/output device for receiving data, a storage for storing the data received by the data input/output device, a data processing program storage for storing a data processing program that includes the steps of calculating, using a double exponential smoothing method, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of the gradient of the smoothed data, and calculating, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of the gradient of the smoothed data, and a data calculation processing apparatus for performing the data processing under the data processing program.

Data processing method, data processing apparatus and processing apparatus

A control systemmay include a packet size analysis unit () that analyzes a distribution of packet sizes of traffic input to VNFs, a capacity calculation unit () that calculates a traffic volume per unit time processible by one VNF based on VNF capacity information indicating a traffic volume (bps, pps) per unit time processible by one VNF for a packet size and the distribution of the packet sizes input to the VNFs, and an installation number calculation unit () that calculates the number of VNFs to be increased or decreased based on the traffic volume per unit time processible by one VNF and the resource amount necessary for forwarding of the traffic.

A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma treatment; a radio frequency power supply configured to supply radio frequency power that generates plasma; a sample stage on which the sample is placed; and an ultraviolet light source configured to apply an ultraviolet ray. The apparatus further includes a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber.

Plasma processing apparatus and plasma processing method

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Tokyo, Japan

Satomi Inoue