Carl Zeiss Smt Gmbh

Carl Zeiss Sms Ltd.

Sascha Perlitz

Johannes Ruoff

Ulrich Matejka

Hans-Jürgen Mann

Christoph Husemann

Markus Deguenther

Heiko Feldmann

Dirk Seidel

Michael Arnz

Thomas Thaler

Thomas Scherübl

Joerg Frederik Blumrich

Shao-Chi Wei

Sandro FÖRSTER

Herbert Gross

The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.

Apparatus and method for characterizing a microlithographic mask

In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.

Method for three-dimensionally measuring a 3D aerial image of a lithography mask

A method is provided for characterizing a mask having a structure, comprising the steps of: illuminating said mask under at least one illumination angle with monochromatic illuminating radiation, so as to produce a diffraction pattern of said structure that includes at least two maxima of adjacent diffraction orders, capturing said diffraction pattern, determining the intensities of the maxima of the adjacent diffraction orders, and determining an intensity quotient of the intensities. A mask inspection microscope for characterizing a mask in conjunction with the performance of the inventive method is also provided.

Method for characterizing a structure on a mask and device for carrying out said method

There is provided an autofocus device for an imaging device which has an imaging lens system with a first focal plane, an object stage for holding an object and a first movement module for the relative movement of object stage and imaging lens system, wherein the autofocus device comprises an image-recording module with a second focal plane the position of which relative to the first focal plane is known,

Grating-assisted autofocus device and autofocusing method for an imaging device

A method is provided for characterizing a mask having a structure, comprising the steps of: &#x2014;illuminating said mask under at least one illumination angle with monochromatic illuminating radiation, so as to produce a diffraction pattern of said structure that includes at least two maxima of adjacent diffraction orders, &#x2014;capturing said diffraction pattern, &#x2014;determining the intensities of the maxima of the adjacent diffraction orders, &#x2014;determining an intensity quotient of the intensities. A mask inspection microscope for characterizing a mask in conjunction with the performance of the inventive method is also provided.

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Jena, Germany

Sascha Perlitz