Samsung Electronics Co., Ltd.

Samyoung Pure Chemicals Co., Ltd.

Sangmoon Yun

Hoon Hee Han

Youngchan Kim

Youngtak Kim

Jungah Kim

Geunjoo Baek

Chisung Ihn

Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.

Etchant compositions and methods of manufacturing integrated circuit devices using the same

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Cheonan-si, South Korea

Sangmoon Yun