Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Sangjine Park

Kuntack Lee

Jihoon Jeong

Boun Yoon

Younghoo Kim

Jeongnam Han

Seohyun Kim

Yongsun Ko

Sukhoon Kim

Youngtak Kim

Young-Hoo Kim

Jihwan Park

Byung-Kwon Cho

Myunggeun Song

Kee Sang Kwon

Jaeuk Shin

Wonjun Lee

Wonsang Choi

Jae-Jik Baek

Hae-Won Choi

Kee-Sang Kwon

Ki-Hyung Ko

Jiwon Yun

Seungmin Shin

Hyeyeong Seo

Seulgee Jeon

Jae-Hwan Lee

Sukhun Choi

Kihoon Choi

Hyunjung Lee

Jaeseong Lee

Anton Koriakin

Hagju Cho

Youngtae Kim

Young Suk Jung

Keonyoung Kim

Suji Kim

Jihun Cheon

Byungjae Park

Bowo Choi

Jeongman Han

Byungkwon Cho

Seongsik Hong

A wafer drying apparatus is disclosed. The wafer drying apparatus may include a drying chamber housing providing a drying space, in which a wafer is disposed, a supercritical fluid supplying part configured to supply a supercritical fluid into the drying space, a wafer heating part configured to heat the wafer disposed in the drying space, and a wafer cooling part configured to cool the wafer disposed in the drying space. The wafer cooling part may include a cooling plate disposed below a place, on which the wafer is loaded, and a cooling conduit inserted in the cooling plate.

Wafer drying apparatus, wafer processing system including the same, and wafer processing method using the same

A substrate processing apparatus including a processing container including a processing space, a substrate support extending in a first direction and a second direction perpendicular to the second direction, and configured to support a substrate in the processing container, a fluid supply device configured to supply a processing fluid in a supercritical state to the processing space through a container supply pipe, and a shower head assembly configured to diffuse the processing fluid supplied from the fluid supply device into the processing space. The shower head assembly includes a first shower head having a first diameter, and a second shower head arranged between the first shower head and the substrate and having a second diameter. The processing container is separated from the shower head assembly in a third direction perpendicular to the first direction and the second direction, such that a flow path is formed between the processing container and the shower head assembly.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

Substrate processing apparatus, semiconductor manufacturing equipment, and substrate processing method

Provided is a substrate drying apparatus. The substrate drying apparatus may include an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space, a lower chamber body including an outlet configured to discharge the supercritical fluid outside the chamber space, and a stage configured to be loaded with a wet substrate and arranged in the chamber space, wherein the upper chamber body and the lower chamber body are configured such that the chamber space is closed by bringing the upper chamber body into contact with the lower chamber body, and the chamber space is opened by separating the upper chamber body from the lower chamber body, and the stage comprises a heater configured to heat the substrate and the supercritical fluid.

Apparatus and method for drying substrate

A fluid supply device configured to supply a processing fluid to a wafer processing device that includes a chamber is provided. The fluid supply device includes a reservoir configured to change the processing fluid into a supercritical fluid state; a wafer protecting device comprising a body configured to prevent a wafer in the chamber of the wafer processing device from being damaged by the processing fluid in the supercritical fluid state by receiving the processing fluid in the supercritical fluid state and limiting a speed of the processing fluid; and a fluid supply line configured to provide a path for the processing fluid between the reservoir and the wafer protecting device and a path for the processing fluid between the wafer protecting device and the wafer processing device.

Wafer processing equipment and method of manufacturing semiconductor device

A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

Substrate transferring unit, substrate processing apparatus, and substrate processing method

An apparatus for drying a wafer, includes: a drying chamber; a supercritical fluid supply module configured to supply supercritical fluid to the drying chamber; a main exhaust line connected to the drying chamber and in which a main valve is installed; and an auxiliary exhaust unit connected to the main exhaust line. The auxiliary exhaust unit includes: an auxiliary exhaust line connected to the main exhaust line and configured to exhaust the supercritical fluid from the drying chamber when the main valve is closed; a negative pressure tank installed in the auxiliary exhaust line; a first valve, installed in the auxiliary exhaust line, that is configured to be opened when the main valve is closed; and a second valve, installed in the auxiliary exhaust line, that is configured to be opened in conjunction with the first valve.

Apparatus for drying wafer and method for drying wafer

A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

Substrate processing method and substrate processing system

A substrate processing method includes providing a surface tension reducing agent as a gas onto a substrate, the substrate having an exposed photoresist layer and layer of developer on the exposed photoresist layer, and causing a bulk flow of the developer in order to remove the developer from the substrate.

Substrate processing method, micropattern forming method, and substrate processing apparatus

An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

Apparatus for processing a substrate

Provided are a wafer cleaning apparatus based on light irradiation capable of effectively cleaning residue on a wafer without damaging the wafer, and a wafer cleaning system including the cleaning apparatus. The wafer cleaning apparatus is configured to clean residue on the wafer by light irradiation and includes: a light irradiation unit configured to irradiate light onto the wafer during the light irradiation; a wafer processing unit configured accommodate the wafer and to control a position of the wafer such that the light is irradiated onto the wafer during the light irradiation; and a cooling unit configured to cool the wafer after the light irradiation has been completed. The light irradiation unit, the wafer processing unit, and the cooling unit are sequentially arranged in a vertical structure with the light irradiation unit above the wafer processing unit and the wafer processing unit above the cooling unit.

Wafer cleaning apparatus based on light irradiation and wafer cleaning system including the same

A semiconductor device includes a landing pad, a first insulating pattern in contact with a lower portion of a side surface of the landing pad, a pad oxide layer having a lateral portion disposed on a portion of an upper surface of the landing pad and a vertical portion in contact with an upper portion of the side surface of the landing pad, a second insulating pattern in contact with an upper surface of the first insulating pattern and covering the first insulating pattern and the pad oxide layer, and a lower electrode that vertically passes through the second insulating pattern and is in contact with a portion of the upper surface and an upper portion of a side surface of the landing pad.

Semiconductor devices having landing pads

Growing community of inventors

Yongin-si, South Korea

Sangjine Park