Samsung Electronics Co., Ltd.

Sangho An

Geunwoo Kim

Heungkyu Kwon

Seunghee Lee

Hyun Cheol Kim

Won-Gil Han

Ohchul Kwon

Jae Heung Lee

Yong Je Lee

Seungweon Ha

Seonju Oh

Yun-Sik Yoo

A bonding wire includes a wire core including a silver-palladium alloy. A coating layer is disposed on a sidewall of the wire core. A palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.

Bonding wire having a silver alloy core, wire bonding method using the bonding wire, and electrical connection part of semiconductor device using the bonding wire

An embodiment includes a substrate treating apparatus comprising: a tape supply member configured to supply a tape to be attached to a substrate; a tape collection member configured to collect a surplus tape that remains after the tape is attached to the substrate; a support member disposed between the tape supply member and the tape collection member and configured to support the substrate while the tape is attached to the substrate; and a temperature adjustment member configured to adjust a temperature of the tape that is supplied from the tape supply member to the support member.

Substrate treating apparatus and substrate treating method

Semiconductor packages are provided. A semiconductor package may include a wiring board and a first semiconductor chip on the wiring board. Moreover, the semiconductor package may include a metal layer on the first semiconductor chip and a second semiconductor chip on the metal layer. The metal layer may be between the first and second semiconductor chips.

Semiconductor packages including a metal layer between first and second semiconductor chips

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Suwon-si, South Korea

Sangho An