Samsung Electronics Co., Ltd.

Sanggyun Woo

Hyunwoo Kim

Sangjun Choi

Joontae Moon

Hyunwo Kim

A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer includes a comonomer having an acid-labile substituent group or a polar functional group, and a copolymer of alkyl vinyl ether and maleic anhydride. The copolymer is represented by the following structure:where k is an integer of 3 to 8, and where X is tertiary cyclic alcohol having 7 to 20 carbon atoms.

Photosensitive polymers, resist compositions comprising the same, and methods for forming photoresistive patterns

A method for forming fine patterns, particularly contact holes, on semiconductor devices by forming an ArF resist pattern and then reducing the size of pattern openings by exposing the resist pattern to radiation from an VUV (vacuum ultraviolet) excimer laser or E-beam radiation during thermal treatment to reduce, temporarily, the T of the resist pattern and allow it to flow, thereby reducing the size of the spaces and openings in the pattern.

Growing community of inventors

Yongin, South Korea

Sanggyun Woo