Samsung Electronics Co., Ltd.

Sang-Yoon Woo

Hyun-woo Kim

Hyunwoo Kim

Ji-Eun Lee

Ki-chul Kim

Han-Mei Choi

Jung-Min Oh

Bong-jin Kuh

Cha-Won Koh

Je-Woo Han

Gyung-Jin Min

Sang-Min Park

Chawon Koh

Seok-hwan Oh

Jong-sung Lim

Jun-ho Yoon

Sang-Ryol Yang

Cheol-Hong Park

Jin-young Yoon

Yong-Jin Cho

Tae-Jin Park

Cheol Hong Park

Yong-Moon Jang

Hyejin Jeon

Ju-hyung An

Young-Sub Yoo

The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.

Photoresist composition for extreme ultraviolet and method of forming photoresist pattern using the same

A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.

Method of forming patterns and method of manufacturing integrated circuit device using the same

In a method of forming a pattern, a lower coating layer and a photoresist layer are sequentially formed on an object layer. An exposure process may be performed such that the photoresist layer is divided into an exposed portion and a non-exposed portion. A portion of the lower coating layer overlapping or contacting the exposed portion is at least partially transformed into a polarity conversion portion that has a polarity substantially identical to that of the exposed portion. The non-exposed portion of the photoresist layer is selectively removed.

Methods of forming patterns using photoresists

Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

Method of fabricating semiconductor device

An apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device using the apparatus may be provided. The manufacturing apparatus may include a liquid supplying portion for forming a liquid film, and a gas supplying unit that may rotate to discharge gas at a wide range of angles. The manufacturing method may include forming a shape and size of a liquid film common to the shape and size of an exposure region through adjusting the direction and pressure in which gas may be discharged to the substrate. Thus, the speed at which a substrate may be moved may be increased, and morphology differences of a substrate may be reduced.

Apparatus and method for manufacturing semiconductor device

Growing community of inventors

Gwangmyeong-si, South Korea

Sang-Yoon Woo