Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Sang-Woo Bae

Hi-Kuk Lee

Cha-Dong Kim

Jung-In Park

Sang-Hyun Yun

Won-Don Joo

Sang-Min Lee

Anton Sergeevich Medvedev

Maksim Vladimirovich Riabko

Akinori Okubo

Hun-Yong Park

Aleksandr Shorokhov

Seong-Keun Cho

Eun-Hee Jeang

Seul-Gi Lee

A plasma monitoring system includes a plasma chamber performing plasma processes, first and second plasma sensing devices, and a controller. The first and second plasma sensing devices are respectively in a first horizontal direction and a second horizontal direction perpendicular to each other from a center point of a monitoring plasma plane in the plasma chamber. The first and second plasma sensing device generate first and second detection signals with respect to the monitoring plasma plane based on a first incident beam radiated from the monitoring plasma plane in the first horizontal direction and a second incident beam radiated from the monitoring plasma plane in the second horizontal direction. The controller detects two-dimensional plasma distribution information with respect to the monitoring plasma plane by performing a convolution operation based on the first and second detection signals, and controls the plasma processes based on the two-dimensional plasma distribution information.

Plasma sensing device, plasma monitoring system and method of controlling plasma processes

In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.

Method of detecting a defect on a substrate, apparatus for performing the same and method of manufacturing semiconductor device using the same

An apparatus and a method for determining an overlap distance of an optical head is disclosed. Positions and light amount distributions of each light spot can be measured, which may be provided from an optical head to a substrate. Gaussian distribution may be applied to the positions and the light amount distributions to calculate a compensation model of each of the light spots. A first accumulated light amount corresponding to each first area of the substrate may be calculated if the optical head is scanning along a first direction of the substrate using the compensation model. A second accumulated light amount corresponding to each second area overlapped with the each first area is calculated if the optical head is scanning along the first direction, which is moved in a second direction by a first distance using the compensation model. An overlap distance may be determined based on a uniformity of summations of the first and second accumulated light amount.

Method of determining an overlap distance of an optical head and digital exposure device using the method

A digital exposure method and a digital exposure device for performing the method are disclosed. In the method, a graphic data system file is produced in correspondence with each of a plurality of patterns formed on a substrate. Then, a digital micromirror device on/off data is generated from the graphic data system file. Then, the substrate is exposed in response to the digital micromirror device on/off data. Thus, at least a first exposure for forming a first pattern of a display panel, and a second exposure for forming identification numbers of a substrate and each display panel and removing an edge portion of the substrate may be simultaneously performed, to simplify the exposure process decrease costs.

Digital exposure method and digital exposure device for performing the method

Growing community of inventors

Seoul, South Korea

Sang-Woo Bae