Samsung Electronics Co., Ltd.

Moohan Co., Ltd.

Sang Tae Sim

Jung Soo Kim

Byoung Ha Cho

Won Hyung Lee

Cheol Ho Shin

Yong Il Kim

Dae Sik Kim

Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit installed in the housing and provided with a plurality of susceptors for receiving wafers thereon so as to move the wafers; a gas spray unit mounted on the upper end of the housing above the rotary disk unit, and provided with first reactive gas sprayers, second reactive gas sprayers and inert gas sprayers on a lower surface of a circular disk for spraying respective gases into the housing; a gas feed unit connected to the gas spray unit for supplying first and second reactive gases and a purge gas into the housing; a gas exhaust port formed around the rotary disk unit; and a plasma generator for generating plasma to excite the second reactive gas.

Method for manufacturing semiconductor device

The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a SiClsource unlike a conventional atomic layer deposition process using a SiClsource. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing &#x2014;OH group.

Method for atomic layer deposition (ALD) of silicon oxide film

Growing community of inventors

Chungcheongbuk-do, South Korea

Sang Tae Sim