Applied Materials, Inc.

Sang M Lee

Li-Qun Xia

Hichem M'Saad

Vladimir Zubkov

Meiyee Shek

Zhenijiang Cui

A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.

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Cupertino, CA, United States of America

Sang M Lee