Semes Co., Ltd.

Sang-Kee Lee

Dukhyun Son

Jong Hwan An

Shin-Woo Nam

Jamyung Gu

Kang Rae Ha

Harutyun Melikyan

Young Bin Kim

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

Substrate treating apparatus and substrate treating method

Embodiments of the inventive concept provide an apparatus and method for storing a substrate. A buffer unit for storing a substrate includes a housing having an entrance formed at one side and a buffer space inside, a substrate support unit that supports one or more substrates in the buffer space, a pressure adjustment unit that adjusts pressure in the buffer space, and a controller that controls the pressure adjustment unit. The pressure adjustment unit includes a gas supply line that supplies a gas for pressurizing the buffer space and a gas exhaust line that reduces the pressure in the buffer space. At least one of the gas supply line and the gas exhaust line includes a plurality of lines.

Buffer unit, and apparatus for treating substrate with the unit

An apparatus comprises a housing having a process space, a support unit supporting the substrate in the process space, a process gas supply unit supplying a process gas into the process space, and a plasma source generating plasma from the process gas. The support unit comprises a support member on which the substrate is placed, a heating member that heats the substrate supported on the support member, and a heat transfer gas supply member that supplies a heat transfer gas to a backside of the substrate. The heating member comprises heaters that heat regions on the substrate on the support member viewed from above. The support member comprises a protrusion that partitions a space between the support member and the backside of the substrate placed on the support member into gas regions, and at least one of heating regions is divided into regions by the protrusion viewed from above.

Substrate treating apparatus, substrate support unit, and substrate treating method

Growing community of inventors

Cheonan-si, South Korea

Sang-Kee Lee