Samsung Electronics Co., Ltd.

Sang-jin An

Vladimir Volynets

Sang-Heon Lee

Gon-jun Kim

In-ho Choi

Xinglong Chen

Hee-jeon Yang

Sung-keun Cho

Sangheon Lee

Yuri Barsukov

Dali Liu

Shamik Patel

Go-jun Kim

Beom-jin Yoo

An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH, SiH, CHF, and CHFto a process chamber.

Etching method using remote plasma source, and method of fabricating semiconductor device including the etching method

An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (HO) and the plasma to a process chamber.

Etching method using plasma, and method of fabricating semiconductor device including the etching method

Growing community of inventors

Suwon-si, South Korea

Sang-jin An