Dnf Co., Ltd.

Sk Innovation Co., Ltd.

Sabic Sk Nexlene Company Pte. Ltd.

Sk Global Chemical Co., Ltd.

Other

Samsung Electronics Co., Ltd.

Skc Co., Ltd.

Sk Ie Technology Co., Ltd.

Gs Caltex Corporation

Sk Geo Centric Co., Ltd.

Sang Ick Lee

Myong Woon Kim

Se Jin Jang

Sung Gi Kim

Byeong-il Yang

Sang-Do Lee

Sun Young Kim

Joong Jin Park

Sang Yong Jeon

Jeong Joo Park

Sam Dong Lee

Dong Cheol Shin

Jeong Hwan Kim

Ho Seong Lee

Jong Sok Hahn

Seong Kyun Kim

Jang Hyeon Seok

Chan Woong Jeon

Jong Hyun Kim

A Ra Cho

Hyo Seung Park

Byeong Il Yang

Hyoseung Park

Haeng Don Lim

Tae Seok Byun

Yong Hee Kwone

Gun-Joo Park

Won Mook Chae

Do Yeon Kim

Sang Chan Lee

Sang Jun Yim

Kang Yong Lee

In Kyung Jung

Young Jae Im

Yun Bong Kim

Younjoung Cho

Won Sub Kwack

Tae Wook Kwon

Heung Taek Bae

Han Sol Lee

Jungsik Choi

Sung Seok Chae

Yonggyu Han

Joo Hyeon Park

Sang Yoon Ji

Ung Ju Lee

Wonwoong Chung

Jeong Hyeon Park

Min Seon Jung

Ki Nam Chung

Hee Yeon Jeong

So Hee Sim

Sung Woo Cho

Do Young Seung

Sudevan Sujith

Sunhye Hwang

Eun Jung Baek

Haengdon Lim

Myoung Woon Kim

Gun Joo Park

Yeong Hun Kim

Heang Don Lim

Sang Do Lee

Tae Hyun Jeon

Seung Son

Jang Woo Seo

Ki Joo Hong

Joon Sung Ryou

Dong Shin Kim

Mi Jeong Han

Provided are a separator for a secondary battery, a method for manufacturing the same, and a lithium secondary battery including the same, and particularly, a separator for a secondary battery which has sufficient thermal resistance and mechanical properties even without using a polymer-based organic binder lacking chemical stability, by adopting a metal alkanoate having a polar group as a binder for binding among particles forming a porous active layer and also between the porous active layer and a porous substrate. A method for manufacturing the same, and a lithium secondary battery including the same are also provided.

Separator for secondary battery, method for manufacturing the same and lithium secondary battery containing the same

Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.

Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same

The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor

Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

Iodine-containing metal compound and composition for depositing thin film including the same

Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present disclosure has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.

Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same

Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.

Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.

Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.

Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the same

Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.

Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition

Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same

The present invention relates to an oligomerization catalyst including a transition metal or transition metal precursor, a halogen-substituted organic ligand, and a heteroatom ligand, and to a method for selectively preparing 1-hexene or 1-octene from ethylene using the catalyst.

Oligomerization catalyst and method for preparing ethylene oligomer using same

Provided is a method for oligomerization of ethylene, and more particularly, a method for producing 1-hexene and 1-octene at a high selectivity under an ethylene atmosphere by inducing a remarkably improved catalytic activity while effectively reducing a production amount of polyethylene by introducing the oligomerization catalyst and a cocatalyst mixture containing at least two aluminums together and adjusting the kind of oligomerization catalyst and injection conditions thereof.

Oligomerization of ethylene

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Daejeon, South Korea

Sang Ick Lee