Dongbu Electronics, Co. Ltd.

Dongbu Anam Semiconductor, Inc.

Dongbu Electronics

Sang Hun Oh

In a disclosed method for manufacturing a semiconductor device, a lower insulating layer, a lower metal line and an upper insulating layer are sequentially stacked. A first photosensitive film is patterned on the upper insulating layer and the upper insulating layer is subsequently etched. The photosensitive film is removed. An etched portion of the upper insulating layer is then filled with a nitride film. The upper insulating layer is then removed. A second photosensitive film is then patterned and the lower metal line is subsequently etched. An IMD layer is deposited over the resultant construct, thereby forming an air gap within the IMD layer. The IMD layer is planarized. The nitride film is then etched away to thereby form a hole in the IMD layer. The hole is filled with a conductive material to form a contact plug. An upper metal line is deposited over the resultant construct.

Methods for forming a metal line in a semiconductor manufacturing process

A method for fabricating a split gate flash memory includes depositing a second conductive layer for forming a control gate on a semiconductor substrate having a first conductive layer, an insulating layer, and an oxide layer on both sides of the first conductive layer formed thereon, filling an anti-implant protective layer in a depression of the second conductive layer, performing ion implant on the second conductive layer, removing the anti-implant protective layer filled in the depression of the second conductive layer, forming a photoresist pattern by depositing a photoresist layer on the second conductive layer for forming a control gate, and treating the photoresist layer with a light exposure and a development process, and forming the control gate by etching the second conductive layer.

Method for fabricating split gate flash memory device

A flash memory device fabrication method is disclosed. A disclosed method comprises: depositing a first oxide layer on a substrate; depositing a first polysilicon layer on the first oxide layer; forming a second oxide layer on the entire surface of the first polysilicon layer; removing the second oxide layer; making the first polysilicon layer with an embossed shape by performing a heat treatment; depositing a dielectric layer on the top of the first polysilicon layer; depositing a second polysilicon layer on the entire surface of the dielectric layer; and removing some parts of the dielectric layer and the second polysilicon layer through a patterning process and an etching process.

Method for fabricating flash memory device

A method for etching a metal layer on which an oxide-based ARC layer is coated in a semiconductor device comprises the step of performing a dry cleaning process by using a Cl/CHFbased gas, after dry cleaning the ARC layer by using the oxide-based gas. As a result, the etching rates of the center area and the edge area are substantially same.

Method for etching a metal layer in a semiconductor device

Method and an apparatus for igniting plasma in a semiconductor manufacturing apparatus are disclosed. An example plasma ignition method and apparatus sets a predetermined pressure, source power and bias power of a chamber and flows a predetermined flow rate of CHFand Ar gases into the chamber, introduces a predetermined flow rate of Clgas into the chamber, completes the supply of Clgas, and ignites plasma.

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Bucheon-si, South Korea

Sang Hun Oh