Intel Corporation

Sandeep Gaan

Aleksandar Aleksov

Srinivas V Pietambaram

Kristof Darmawikarta

Sri Ranga Sai Boyapati

Shawna M Liff

Debendra Mallik

Rahul N Manepalli

Robert Alan May

Sanka Ganesan

Rahul Jain

Junnan Zhao

Suddhasattwa Nad

Jimin Yao

Prithwish Chatterjee

Ravindra V Tanikella

Darko Grujicic

Aastha Uppal

Sameer Paital

Marcel Arlan Wall

Rengarajan Shanmugam

Roy Dittler

Pilin Liu

Sri Chaitra Chavali

Adrian Bayraktaroglu

Ke Liu

Sameer R Paital

Embodiments include inductors and methods of forming inductors. In an embodiment, an inductor may include a substrate core and a conductive through-hole through the substrate core. Embodiments may also include a magnetic sheath around the conductive through hole. In an embodiment, the magnetic sheath is separated from the plated through hole by a barrier layer. In an embodiment, the barrier layer is formed over an inner surface of the magnetic sheath and over first and second surfaces of the magnetic sheath.

Thin film barrier seed metallization in magnetic-plugged through hole inductor

Embodiments include an electronics package and methods of forming such packages. In an embodiment, the electronics package comprises a first package substrate. In an embodiment, the first package substrate comprises, a die embedded in a mold layer, a thermal interface pad over a surface of the die, and a plurality of solder balls over the thermal interface pad. In an embodiment, the thermal interface pad and the solder balls are electrically isolated from circuitry of the electronics package. In an embodiment, the electronics package further comprises a second package substrate over the first package substrate.

Interposer package-on-package (PoP) with solder array thermal contacts

Embodiments of the present disclosure describe techniques for providing an apparatus with a substrate provided with plasma treatment. In some instances, the apparatus may include a substrate with a surface that comprises a metal layer to provide signal routing in the apparatus. The metal layer may be provided in response to a plasma treatment of the surface with a functional group containing a gas (e.g., nitrogen-based gas), to provide absorption of a transition metal catalyst into the surface, and subsequent electroless plating of the surface with a metal. The transition metal catalyst is to enhance electroless plating of the surface with the metal. Other embodiments may be described and/or claimed.

Apparatus with a substrate provided with plasma treatment

Integrated circuit (IC) package substrates having high density interconnects with a sputter seed layer containing a copper alloy, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, a package substrate may include a first dielectric layer, a sputter seed layer disposed on the first dielectric layer, wherein the seed layer includes a copper alloy, a patterned conductive layer disposed on the seed layer, and a second dielectric layer over the patterned conductive layer.

Package substrate having copper alloy sputter seed layer and high density interconnects

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Phoenix, AZ, United States of America

Sandeep Gaan