Chartered Semiconductor Manufacturing Ltd (corporation)

San Leong Liew

John Leonard Sudijono

Bei Chao Zhang

Liang Choo Hsia

Fan Zhang

Chim Seng Seet

Johnny Widodo

Yong Kong Siew

Tong Qing Chen

Lai Lin Clare Yong

A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier layer over the sidewalls and bottom of the interconnect opening by reacting with the first copper layer. We then form an interconnect over the CuSiN layer filling the interconnect opening. We can form a CuSiN cap layer on the top surface of the interconnect.

Entire encapsulation of Cu interconnects using self-aligned CuSiN film

A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200&#xb0; C. Another embodiment has a pre-cooling step at a temperature less than 100&#xb0; C. prior to Ta layer sputter deposition. In another non-limiting example embodiment, a pre-clean step comprising an inert gas sputter is performed prior to the tantalum sputter. Another non-limiting example embodiment provides a semiconductor structure comprising: a semiconductor structure; a copper layer over the semiconductor structure; a tantalum layer on the copper layer; the tantalum layer comprised alpha phase Ta; a metal layer on the tantalum layer.

Method to form alpha phase Ta and its application to IC manufacturing

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Singapore, Singapore

San Leong Liew