Agc Inc.

Sadatatsu Ikeda

Hiroshi Hanekawa

Yoichi Sera

Tsuyoshi Kakuta

Toshiyuki Uno

Daijiro Akagi

Takuma Kato

Keishi Tsukiyama

Ryusuke Oishi

Chikako Hanzawa

Yukihiro Iwata

A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

Reflective mask blank and reflective mask

A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2&#x3b8;) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

Growing community of inventors

Tokyo, Japan

Sadatatsu Ikeda