Hitachi-Kokusai Electric Inc.

Kokusai Electric Corporation

Sadao Hisakado

Tomoshi Taniyama

Yoshikazu Takashima

Shinya Morita

Takashi Ozaki

Kiyohiko Maeda

Hiroshi Unami

Shuhei Saido

Tsukasa Kamakura

Takafumi Sasaki

Kenji Kameda

Takatomo Yamaguchi

Takeo Hanashima

Hiroaki Hiramatsu

Koei Kuribayashi

Shinya Ebata

Hiroto Yamagishi

There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

Method of cleaning member in process container, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

According to the technique of the disclosure, there is provided a substrate processing apparatus including: a substrate retainer; a heat insulating assembly; a process chamber; a gas supplier including openings bored toward the wafer; a gas discharger including main exhaust openings bored toward the wafer; an exhaust port; an intermediate exhaust opening provided on a side wall of the process chamber at a position facing the heat insulating assembly; and a supply chamber exhaust port provided on the side wall of the process chamber at a height corresponding to the intermediate exhaust opening. The heat insulating assembly includes a constriction at a position corresponding to the intermediate exhaust opening, wherein its outer diameter is smaller than that of a portion of the heat insulating assembly above the position and that of another portion of the heat insulating assembly below the position.

Substrate processing apparatus

A CVD device has a reaction furnace () for processing a wafer (); a seal cap () for sealing the reaction furnace () hermetically; an isolation flange () opposite to the seal cap (); a small chamber () formed by the seal cap (), the isolation flange (), and the wall surface in the reaction furnace (); a feed pipe () for supplying a first gas to the small chamber (); an outflow passage () provided in the small chamber () for allowing the first gas to flow into the reaction furnace (); and a feed pipe () provided downstream from the outflow passage () for supplying a second gas into the reaction furnace (). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

Substrate processing apparatus and method for manufacturing a semiconductor device

A CVD device has a reaction furnace () for processing a wafer (); a seal cap () for sealing the reaction furnace () hermetically; an isolation flange () opposite to the seal cap (); a small chamber () formed by the seal cap (), the isolation flange (), and the wall surface in the reaction furnace (); a feed pipe () for supplying a first gas to the small chamber (); an outflow passage () provided in the small chamber () for allowing the first gas to flow into the reaction furnace (); and a feed pipe () provided downstream from the outflow passage () for supplying a second gas into the reaction furnace (). Byproducts such as NHCl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

Growing community of inventors

Tokyo, Japan

Sadao Hisakado