Taiwan Semiconductor Manufacturing Comp. Ltd.

Sa-Na Lee

Syun-Ming Jang Jang

Tsu Shih

Chi-Weng Chung

A method for removing a metal oxide overlayer over a target polishing surface in conjunction with a chemical mechanical polishing (CMP) process to improve polishing uniformity including providing a substrate target polishing surface having a layer of an oxide of a metal overlying said metal to be chemically mechanically polished; removing the layer of an oxide of the metal using an oxide removal solution prior to performing a CMP process with an abrasive slurry; and, polishing the target polishing surface according to an a CMP process with an abrasive slurry including at least one of an oxidizer and a complexing agent.

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Hsinchu, Taiwan

Sa-Na Lee