Siltronic Ag

Rüdiger Schmolke

Wilfried Von Ammon

Reinhold Wahlich

Brian Murphy

James Moreland

Erich Daub

Christoph Frey

SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is &#x2266;20 nm in thickness, has an HF density of &#x2266;0.1/cm, and a surface roughness of 0.2 nm RMS.

Film or layer of semiconducting material, and process for producing the film or layer

The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.

Film or layer made of semi-conductive material and method for producing said film or layer

A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*10atcmand greater than 1*10atcm. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.

Growing community of inventors

Burghausen, Germany

Rüdiger Schmolke