Panasonic Corporation

Ryuzou Houchin

Hiroyuki Suzuki

Shogo Okita

Syouzou Watanabe

Hiromi Asakura

Gaku Sugahara

Mitsuru Hiroshima

A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.

Plasma processing apparatus and plasma processing method

Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.

Wafer reclamation method and wafer reclamation apparatus

A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. A dielectric plate includes a tray support surface supporting a lower surface of the tray, substrate placement portions inserted from a lower surface side of the tray into the substrate accommodation holes and having a substrate placement surface at its upper end surface. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement surface. The substrate is retained on the substrate placement surface with high degree of adhesion. Cooling efficiency of the substrate is improved and processing is uniform at the entire region of the substrate surface.

A trayfor a dry etching apparatushas substrate accommodation holesA toD penetrating thickness direction and a substrate support portionsupporting an outer peripheral edge portion of a lower surfaceof a substrate. A dielectric platehas a tray support surfacesupporting a lower surface of the tray, substrate placement portionsA throughD inserted from a lower surface side of the trayinto the substrate accommodation holesA throughD and having a substrate placement surfaceat its upper end surface for placing the substrate. A dc voltage applying mechanismapplies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanismsupplies a heat conduction gas between the substrateand substrate placement surface. The substratecan be retained on the substrate placement surfacewith high degree of adhesion. This results in that the cooling efficiency of the substrateis improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.

Growing community of inventors

Osaka, Japan

Ryuzou Houchin