Sumco Corporation

Nitta Haas Inc.

Ryuichi Tanimoto

Shinichi Ogata

Takeo Katoh

Shunsuke Mikuriya

Takeru Takushima

Makoto Ando

Yasuo Yamada

Keiichi Takanashi

Kazushige Takaishi

Masashi Teramoto

Takashi Nishitani

Ryoya Terakawa

Ichiro Yamazaki

Shuhei Matsuda

Tetsuro Iwashita

Hironori Kaneko

Tatsunori Izumi

Yuhei Matsunaga

Ichiro Yamasaki

A wafer edge polishing apparatus includes a cleaning mechanism exhibiting a superb effect of cleaning slurry residue adhered on a chuck table. This edge polishing device is provided with: a chuck table which sucks/holds a wafer; a rotation drive mechanism which rotates the chuck table; an edge polishing unit which polishes an edge of the wafer while supplying slurry to the wafer, which is rotating while being sucked/held by the chuck table; and a cleaning unit which removes slurry residue on the chuck table. The cleaning unit includes a cleaning head, and cleans the chuck table through high-pressure cleaning and brush-cleaning by using the cleaning head, wherein the cleaning head is provided with a high-pressure jet nozzle and a brush surrounding the periphery of the high-pressure jet nozzle.

Wafer edge polishing apparatus and method

Provided is a method of double-side polishing a silicon wafer using a double-side polishing apparatus, the method including in succession: a first polishing step of performing double-side polishing while supplying a first polishing agent that is an alkaline aqueous solution containing abrasive grains to the polishing cloths; a polishing agent switching step of stopping the supply of the first polishing agent and starting the supply of a second polishing agent that is an alkaline aqueous solution containing a water-soluble polymer with no abrasive grains, with the polishing cloths of the upper plate and the lower plate being in contact with the front surface and the back surface of the silicon wafer, respectively and with the upper plate and the lower plate being continuously rotated; and a second polishing step of performing double-side polishing while supplying the second polishing agent to the polishing cloths.

Method of double-side polishing silicon wafer

A wafer polishing method of applying mirror polishing to a surface of a wafer using a wafer polishing apparatus provided with a multi-zone pressurizing polishing head having a wafer pressing surface divided into a plurality of pressure zones and capable of performing pressurizing control independently for each pressure zone is provided with a measurement step of measuring a nanotopography map on the wafer surface; and a polishing step of performing the polishing by setting the polishing pressure of the polishing head against the wafer for each pressure zone based on a result of the measurement of the nanotopography map.

Wafer polishing method

A wafer polishing apparatus is provided with a rotating platen to which a polishing pad is affixed and a polishing head that holds a wafer placed on the polishing pad while pressing the wafer. The polishing head has a membrane that contacts the upper surface of the wafer and applying a pressing force thereto and a support plate that supports the membrane. The membrane has a main surface part facing the bottom surface of the support plate and a side surface part facing the outer peripheral edge surface of the support plate. The vertical tension due to the side surface part of the membrane is larger than the lateral tension due to the main surface part of the membrane.

Wafer polishing apparatus and polishing head used for same

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 &#x3bc;m/min can be achieved.

Polishing composition and polishing method using the same

In a polishing method of the present invention, the temperature of a carrier plate is measured, and the amount of polishing removal of a workpiece (workpiece) is accurately controlled based on change in the measured temperature of the carrier plate.

Method and apparatus for polishing workpiece

Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled.

Method for polishing silicon wafer and polishing liquid therefor

This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5&#xd7;10grains/cm.

Method of polishing a silicon wafer

A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.

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Tokyo, Japan

Ryuichi Tanimoto