Mitsubishi Electric Corporation

Kabushiki Kaisha Toshiba

Nissan Chemical Industries Limited

The Japan Steel Works, Ltd.

Toshiba Corporation

National Federation of Agricultural Cooperative Associations

Criteria Communications Inc.

Action Click Co., Ltd.

Ryuichi Ishii

Yoichi Tsuda

Masayuki Yamada

Noriyuki Besshi

Takeo Takahashi

Masaru Fuku

Masafumi Fukuda

Takeo Suga

Takao Mitsui

Takayuki Yamada

Katsuya Yamashita

Nobuo Okita

Hiroshi Gokan

Yukio Shinozaki

Seiko Takahashi

Takuya Matsumoto

Shiro Kidera

Kazuya Fukuhara

Masaru Kobayashi

Tsukasa Azuma

Hirotoshi Maekawa

Shozo Kanzaki

Matahiko Ikeda

Yuji Fujimoto

Yomei Yoshioka

Masataka Kikuchi

Takao Inukai

Satoru Asai

Eiji Maeda

Toshinori Yamane

Komei Hayashi

Dai Yoshii

Naoki Moritake

Yuya Muramatsu

Yasuhiko Kitamura

Kazuki Arata

Meiro Adachi

Kenji Hamada

Toshiyuki Yasutomi

Joji Kaneko

Yusuke Hirata

Koki Hayakashi

Atsuhiko Kumura

Bing-Shan Luo

Fumio Fujita

Kenji Matsuda

Provided is a resin-sealed semiconductor device that can regulate the thickness of a joining material joining a semiconductor element and a lead frame and inhibit the joining material from leaking out of a proper range. The resin-sealed semiconductor device includes a second lead frame joined via a second joining material above a semiconductor element joined above a heat spreader. The second lead frame has, on a surface thereof opposed to the semiconductor element, a protrusion to regulate a thickness of the second joining material, and a groove formed at a peripheral part of the second joining material.

Resin-sealed semiconductor device and method for manufacturing resin-sealed semiconductor device

This semiconductor device includes a first dummy terminal extending from a second conductor toward one side in a first direction, a second dummy terminal extending from a fourth conductor toward another side in the first direction, and a third dummy terminal extending from a third conductor through between a third conductive plate and a fourth conductive plate toward one side in a second direction, and connected to a second AC terminal. In a state in which ends of the first dummy terminal, the second dummy terminal, first control terminals, second control terminals, second AC terminals, first AC terminals, N terminals, and P terminals are exposed, the first conductive plate, a second conductive plate, the third conductive plate, the fourth conductive plate, first switching elements, second switching elements, a first conductor, the second conductor, the third conductor, and the fourth conductor are sealed by a resin member.

Semiconductor device and manufacturing method therefor

A power semiconductor device includes: a plurality of power modules including control terminals; a heat sink, on which the plurality of power modules are mounted; and a control substrate, to which the control terminals are fixed. The plurality of power modules each include a first protruding portion close to the control terminals, and a second protruding portion far from the control terminals. The heat sink has, at a position corresponding to the first protruding portion, a first recessed portion formed to have an inner diameter larger than an outer diameter of the first protruding portion, and engaged with the first protruding portion. At a position corresponding to the second protruding portion, the heat sink has a second recessed portion formed to have the shape of an elongated hole whose minor diameter is larger than an outer diameter of the second protruding portion, and engaged with the second protruding portion.

Power semiconductor device and method for manufacturing power semiconductor device

The semiconductor device includes: a heat spreader; a semiconductor element joined to the heat spreader via a first joining member; a first lead frame joined to the heat spreader via a second joining member; a second lead frame joined to the semiconductor element via a third joining member; and a mold resin. In a cross-sectional shape obtained by cutting at a plane perpendicular to a one-side surface of the heat spreader, an angle on the third joining member side out of two angles formed by a one-side surface of the semiconductor element and a straight line connecting an end point of a joining surface between the third joining member and the semiconductor element and an end point of a joining surface between the third joining member and the second lead frame, is not smaller than 90&#xb0; and not larger than 135&#xb0;.

Semiconductor device resistant to thermal cracking and manufacturing method thereof

In this semiconductor device, a positioning protrusion is formed at a side surface of a sealing resin from which one end of a main electrode wire protrudes. Thus, the outer size of the sealing resin can be reduced as compared to a case where a positioning protrusion is formed at the bottom of the sealing resin. In addition, a thickness regulating protrusion is provided with a space from solder. Thus, it is possible to prevent interface separation or crack that would occur starting from a contact part between the thickness regulating protrusion and the solder, whereby the life of a joining part between a semiconductor module and a cooler can be ensured. Accordingly, a semiconductor device having enhanced heat dissipation property and reliability is obtained without increase in the outer size of the semiconductor module.

Semiconductor device with a metal plate

Two semiconductor elements and a capacitive element are located at vertices of a triangle. A first shortest path between the semiconductor elements, and a second shortest path and a third shortest path between the capacitive element and the two respective semiconductor elements, satisfy (first shortest path)&#x2265;(second shortest path) and ((first shortest path)+(second shortest path))&#x2265;(third shortest path). A first electrically conductive metal pattern and a second electrically conductive metal pattern each have a thickness that is equal to or larger than two times a depth of a skin through which current flows owing to skin effect generated according to frequency characteristics of current paths having: a first resonance frequency obtained from capacitances and inductances between the semiconductor elements; a second resonance frequency between one of the semiconductor elements and the capacitive element; and a third resonance frequency between another one of the semiconductor elements and the capacitive element.

Power module

Provided is a power conversion unit, in which a power smoothing capacitor is configured such that a plurality of unit capacitors as conductive polymer hybrid aluminum electrolytic capacitors are arrayed in a grid pattern and connected in parallel on a circuit board, and also connected to a plurality of unit modules of different phases via positive and negative bus bars arranged on both sides of the circuit board so that each group of several unit capacitors and each unit module are arranged close to each other, to thereby reduce wiring impedance of a power supply circuit and suppress noise generation.

Power conversion unit

A semiconductor device comprises: a ceramic substrate having conductor layers on both surfaces thereof; a semiconductor element joined to the upper surface conductor layer of the ceramic substrate; a frame member arranged on the upper surface conductor layer so as to surround a side surface of the semiconductor element; and an electrode, which is joined to an upper portion of the semiconductor element via a second fixing layer, and has fitting portions on a side surface of the electrode. On an inner wall of the frame member, fitting portions to be fitted to the fitting portions of the electrode and four positioning portions extending from the inner wall of the frame member to the side surfaces of the electrode are formed.

Semiconductor device and method for manufacturing thereof

Provided is a power semiconductor device including a signal terminal and a power semiconductor element. The power semiconductor element is arranged on a substrate. The signal terminal includes a main body portion and a joint portion, and a part of the signal terminal is held by a terminal block. The joint portion includes a distal end portion and a base portion. The distal end portion includes a pad portion that is exposed from the terminal block and connected to a signal line. The base portion includes a thin portion in which a thickness in a vertical direction is set to be smaller than that of the pad portion. The thin portion has an upper surface that is formed at a position lower than an upper surface of the pad portion and is covered with a resin material forming the terminal block.

Power semiconductor device

Provided is a power semiconductor device which is able to have improved connection reliability between a wiring line and an electrode of a power semiconductor element in comparison to conventional power semiconductor devices. This power semiconductor device is provided with: a semiconductor element; an insulating substrate having an electrode layer to which the semiconductor element is bonded; an external wiring line which is solder bonded to an upper surface electrode of the semiconductor element and has an end portion for external connection, said end portion being bent toward the upper surface; and a frame member which is affixed to the electrode layer of the insulating substrate. The frame member has a fitting portion that is fitted with the end portion for external connection; and the external wiring line has at least two projected portions that protrude toward the semiconductor element.

In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.

Freedom of layout is increased, and a small, low-priced molded resin-sealed power semiconductor device is obtained. A molded resin-sealed power semiconductor device includes a power semiconductor element, a lead frame having a thick portion on which the power semiconductor element is mounted and a thin portion thinner than the thick portion, an inner lead that electrically connects the power semiconductor element and lead frame, and a molded resin that seals the power semiconductor element, lead frame, and inner lead.

Molded resin-sealed power semiconductor device

An electric power converter includes a switching device that performs electric-power conversion through switching, an insulated substrate having a first side and a second side that are opposite to each other, a first circuit with which the switching device is electrically connected and that is bonded to the first side of the insulated substrate, a second circuit that is formed in a shape the same as that of the first circuit and is bonded to the second side of the insulated substrate, and a base to which the second circuit is bonded through the intermediary of a bonding layer; each of corner portions in the respective planar shapes of the first circuit and the second circuit has a stress relaxation portion that is formed in such a way as to have a smaller thickness than the other portion.

Electric power converter and power module

Stress relief layers are each provided on each circuit on an insulating substrate in a semiconductor module; a metal base coming into contact with the semiconductor module is divided into a thinned and low stiffened first metal base and a thickened and high stiffened second metal base; and the semiconductor module is bonded to the first metal base and then the first and the second metal bases are bonded to be integrated.

Semiconductor device

The invention provides a reactor to be built in a power converter. In the reactor, an induction component composed of a coil being a winding of a conductor wire, a core in which interior a magnetic path is formed and an insulation bobbin positioning and engaging a wire wound part of the coil is housed in a case to be soaked with a mold resin. Inner bottom face of the case has a plurality of surfaces having not less than two different heights letting the outside bottom of the case a reference surface, and the lower end face of the core is in contact with any of the case inner bottom surfaces excluding the lowest inner bottom surface. As a result, the reactor is suitable for on-vehicle applications to achieve reduced article variation as well as a longer service life, a shorter operation time and decreased cost.

Reactor

Growing community of inventors

Tokyo, Japan

Ryuichi Ishii