Shin-etsu Chemical Co., Ltd.

Other

Ryuichi Handa

Kazuhiko Tomaru

Tsutomu Yoneyama

Akio Nakano

Ikuo Sakurai

Noboru Shimamoto

Tooru Takamura

Ryuichi Miura

This invention relates to a suitable electrostatic chuck to hold a substrate during the manufacture of a semiconductor integrated circuit having excellent cooling performance and insulation performance, and a low level of particulate generation, which is comprised of an electrostatic chuck, comprising a metal substrate, a first insulating layer of silicone rubber formed directly or via an adhesive layer on the metal substrate and having a thermal conductivity of 0.5 W/mK or more, an electrically conducting pattern formed directly or via an adhesive layer on this first insulating layer, a second insulating layer of an insulating polyimide film formed directly or via an adhesive layer on this electrically conducting pattern, and a third insulating layer formed directly or via an adhesive layer on this second insulating layer, wherein this third insulating layer is a silicone rubber containing reinforcing silica, this layer not containing any thermally conductive filler having an average particle size of 0.5 &#x3bc;m or more.

Electrostatic chuck

An electrostatic chuck comprises an insulating layer with an electrode embedded therein and having a surface to come in contact with a workpiece to be held. Formed on the insulating layer surface is a silicone rubber layer which is filled with reinforcing silica, but free of another filler having an average particle size of at least 0.5 &#x3bc;m. The ESC allows for an intimate contact with a wafer and has an improved cooling capacity.

Provided is an electrostatic chuck, including: a first insulating layer including a heat conductive silicone rubber with a thermal conductivity of at least 0.2 W/mK, which is formed on top of a metal substrate, either directly or with an adhesive layer disposed therebetween; a conductive pattern, which is formed on top of the first insulating layer, either directly or with an adhesive layer disposed therebetween; a second insulating layer including an insulating polyimide film, which is formed on top of the conductive pattern, either directly or with an adhesive layer disposed therebetween; and a third insulating layer including a heat conductive silicone rubber with a thermal conductivity of at least 0.2 W/mK, a hardness of no more than 85, and a surface roughness of no more than 5 &#x3bc;m, which is formed on top of the second insulating layer, either directly or with an adhesive layer disposed therebetween. Also provided is a process for holding a substrate on the electrostatic chuck. The electrostatic chuck exhibits excellent cooling performance and insulation performance, and is ideal for holding a substrate during the production of a semiconductor integrated circuit.

A heat-softening heat-radiation sheet including a polyolefin-based heat-conductive composition which comprises a polyolefin and a heat-conductive filler, has a softening point of 40&#xb0; C. or above, has a thermal conductivity of 1.0 W/mK or higher, has a viscosity at 80&#xb0; C. of from 1&#xd7;10to 1&#xd7;10Pa&#xb7;s and has a plasticity at 25&#xb0; C. in the range of from 100 to 700. This heat-radiation sheet which is in the form of a solid sheet at room temperature, can readily be attached to or detached from electronic components and a heat sink, is capable of softening by the heat generated during operation of electronic components, to have the interfacial contact thermal resistance at a negligible level, and has a superior heat-radiation performance.

Heat-softening heat-radiation sheet

A wafer chuck used in manufacturing processes of integrated semiconductors and liquid crystal panels, more particularly, an electrostatic silicone rubber chuck for ion injectors used in an ion injection process.

Electrostatic chuck for ion injector

A dustproof covering film-attached wafer support comprising a base, a silicone rubber layer substantially uniform in thickness and integrated with the base and a dustproof covering film, with the dustproof covering film is attached to the silicone rubber layer in a state that the peel strength between the dustproof covering film and the silicone rubber layer is from 5 to 500 g/25 mm, thereby enabling the covering film to be peeled apart as the need arises; and a production method for such a wafer support.

Wafer support having a dustproof covering film

Wafer holders disposed in the target chamber of an ion implantation apparatus, with each of the wafer holders comprising a wafer mount and an electrically conductive elastic body that is laid on the wafer mount and has a surface for holding a wafer thereon.

Wafer holder of ion implantation apparatus

An electrostatic chuck comprises a metallic plate, a first insulating layer formed on the metallic plate and composed of a ceramic material, an electrically conductive electrode pattern formed on the first insulating layer, and a second insulating layer formed on the conductive electrode pattern and made of an elastomer. Alternatively, the first and second insulating layers may be each made of a thermally conductive silicone rubber provided that the thermally conductive silicone rubber for the second insulating layer should have a hardness of 85 or below a surface roughness of 5 .mu.m or below.

A method of producing a cover-packing assembly for a hard disk device is disclosed which comprises applying a liquid self-adhesive silicone rubber material to a predetermined position of a cover member, and curing the rubber material. According to the method, the formation of a packing member and the adhesion of the packing member to the cover member are performed simultaneously on the cover member. Thus, use of a pressure sensitive adhesive, an adhesive or the like, as in the case of employing a packing member comprising a molded or die-cut product, is unnecessary in this method, which is extremely advantageous.

Growing community of inventors

Annaka, Japan

Ryuichi Handa