Hitachi, Ltd.

Ryouji Hamasaki

Tokuo Kure

Tetsuo Ono

Masayuki Kojima

Tatsumi Mizutani

Takafumi Tokunaga

Kazue Takahashi

Motohiko Yoshigai

Hironobu Kawahara

Takashi Fujii

Saburo Kanai

Youichi Itou

Masanori Kadotani

According to the present invention, there is provided a sample surface treating apparatus for processing a fine pattern by plasma etching, including a stage provided in a chamber, on which a sample to be subjected to a surface treatment is placed; etching gas supply source for continuously supplying an etching gas for plasma generation into the chamber; a plasma generator for generating a high-density plasma in the chamber; a bias power supply for applying a bias voltage of 100 kHz or higher to the stage independently of the plasma generation; and a pulse modulator for modulating the bias power supply at a frequency of 100 Hz to 10 kHz, wherein a surface treatment in which the minimum feature size is 1 &#x3bc;m or smaller is performed on the sample placed on the stage.

Method and apparatus for treating surface of semiconductor

A method and apparatus of treating a surface of a sample. A sample is arranged on a stage provided in a chamber, an etching gas is continuously supplied into the chamber and a plasma is generated from the etching gas. An rf bias at a frequency of 100 kHz or higher is applied to the stage independently of the generation of the plasma, and the rf bias is modulated at a frequency of 100 Hz to 10 kHz. Thereby, a surface treatment in which a minimum feature size is 1 &mgr;m or smaller is performed on the sample.

A stage with an electrostatic attracting means is adapted for use in a wafer treatment at a high temperature in a vacuum treatment system. In a vacuum treatment system having a stage provided in a treatment chamber, which electrostatically attracts an object to the stage in a low pressure atmosphere, and treats the object at high temperature by heating the stage, an electrode member of the stage is made of titanium or a titanium alloy and a dielectric film for electrostatic attraction is formed on the electrode member. In order to bond firmly titanium and alumina ceramics, it is desirable to sandwich a nickel alloy (Ni&mdash;Al) between the materials.

Vacuum treatment system and its stage

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Hikari, Japan

Ryouji Hamasaki