Tdk Corporation

Ryota Nomura

Tetsuhiro Takahashi

Hiroki Akiba

Toshihiro Iguchi

Sanshiro Aman

Provided is a dielectric composition containing: a main component expressed by {BaSr}TaO; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and manganese. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 5.0 to 20.0 parts by mole in terms of SiO, and the amount of manganese contained in the dielectric composition is 1.0 to 4.5 parts by mole in terms of MnO.

Dielectric composition and electronic component

In order to provide a dielectric composition having high density even when fired at a relatively low temperature, the main component of a dielectric composition includes tantalum and at least one of barium or strontium, and the subcomponent of the dielectric composition includes at least one element selected from the group consisting of vanadium, titanium, and aluminum.

A dielectric composition comprising a main component expressed by a chemical formula of (ABCDO, 0&#x2264;x&#x2264;5), wherein said 'A' component is at least one element selected form the group consisting of Ba, Ca, and Sr, said 'B' component is at least one element selected from the group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, said &#x201c;C&#x201d; component is at least one element selected from the group consisting of Ti, and Zr, said &#x201c;D&#x201d; component is at least one element selected from the group consisting of Nb, and Ta, and said dielectric composition comprises 2.50 mol or more and 20.00 mol or less of an oxide of Ge as a first sub component with respect to 100 mol of said main component.

Growing community of inventors

Tokyo, Japan

Ryota Nomura