Tanaka Kikinzoku Kogyo K.k.

National Institute of Advanced Industrial Science and Technology

Tanaka Kikinzoku K.k.

Ryosuke Harada

Toshiyuki Shigetomi

Kazuharu Suzuki

Shunichi Nabeya

Takayuki Sone

Akiko Kumakura

Masayuki Saito

Tatsutaka Aoyama

Yasushi Masahiro

Junichi Taniuchi

Shigeyuki Ootake

Seung-Joon Lee

Hideo Konno

Rumi Kobayashi

Teruhisa Iwai

Satoshi Miyazaki

Tomohiro Tsugawa

Tasuku Ishizaka

Michihiro Yokoo

Naoki Nakata

Ketan Baban Katkar

A raw material for chemical deposition for producing a manganese thin film or a manganese compound thin film by chemical deposition method, including an organomanganese compound represented Chemical Formula 1 in which a cyclopentadienyl ligand and an isocyanide ligand are coordinated to manganese, which has basic characteristics as a raw material for chemical deposition and enables formation of a manganese thin film with a reducing gas such as hydrogen used as a reaction gas.

Chemical vapor deposition method using an organomanganese compound as a starting material

The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand Lis represented by the following Formula 2:

Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition

The present invention relates to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing a ruthenium complex represented by the following Chemical Formula 1. In Chemical Formula 1, ligands Land Lcoordinated to ruthenium are represented by the following Chemical Formula 2. The raw material for chemical deposition according to the present invention can be formed into a high quality thin film even if a reaction gas containing an oxygen atom is not used. 

Raw material for chemical deposition containing ruthenium complex, and chemical deposition method using the raw material for chemical deposition

A raw material for vapor deposition for producing a platinum thin film or a platinum compound thin film by a vapor deposition method. The raw material for vapor deposition includes an organoplatinum compound represented by the following formula, in which a cyclopentene-amine ligand and an alkyl ligand are coordinated to divalent platinum. The organoplatinum compound of the present invention has moderate thermal stability and can respond flexibly to severe film formation conditions, including a wider film formation area, higher throughput, and the like. (In the formula, R, R, and Rare each any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group, and an isocyano group, each having 4 or less carbon atoms, and Rand Rare each an alkyl group having 1 or more and 3 or less carbon atoms.)

Raw material for vapor deposition including organoplatinum compound and vapor deposition method using the raw material for vapor deposition

The present invention relates to a chemical deposition raw material for manufacturing an iridium thin film or an iridium compound thin film by a chemical deposition method, including an iridium complex in which cyclopropenyl or a derivative thereof and a carbonyl ligand are coordinated to iridium. The iridium complex that is applied in the present invention enables an iridium thin film to be manufactured even when a reducing gas such as hydrogen is applied. in which Rto R, which are substituents of the cyclopropenyl ligand, are each independently hydrogen, or a linear or branched alkyl group with a carbon number of 1 or more and 4 or less.

Chemical deposition raw material including iridium complex and chemical deposition method using the chemical deposition raw material

The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the chemical vapor deposition raw material including a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula (): A raw material according to the present invention is capable of producing a high-purity ruthenium thin film, and has a low melting point and moderate thermal stability. Thus, the raw material according to the present invention is suitable for use in electrodes of various kinds of devices. 

Chemical vapor deposition raw material including dinuclear ruthenium complex and chemical deposition method using chemical vapor deposition raw material

The present invention provides a method for producing a cyclometalated iridium complex by use of a non-chlorine iridium raw material. The method for producing a cyclometalated iridium complex includes producing a cyclometalated iridium complex by reacting a raw material including an iridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond, the raw material being non-halogenated iridium having a conjugated base of a strong acid as a ligand. Here, the non-halogenated iridium is preferably one containing a conjugated base of a strong acid having a pKa of 3 or less as a ligand.

Method for producing cyclometalated iridium complex

The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (M) and the second transition metal (M) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents Rto R. With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material. 

Chemical deposition raw material including heterogeneous polynuclear complex and chemical deposition method using the chemical deposition raw material

An organoplatinum compound with the following formula for use as a raw material in the chemical deposition of platinum compound thin films. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The vapor pressure of the organoplatinum compound is high enough to allow for the manufacturing of a platinum thin film at low temperature. It also has moderate thermal stability. 

Organoplatinum compound for use in the chemical deposition of platinum compound thin films

A heterogeneous polynuclear complex for use as a raw material in the chemical deposition of composite metal or composite metal thin films with the below formula. In the formula, Mand Mare mutually different transition metals, x is an integer of 0 or more and 2 or less, y is in integer of 1 or more and 2 or less, z is an integer of 1 or more and 10 or less, Rto Rare each one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less, and Ris a hydrogen atom, a carbonyl, an alkyl group with a carbon number of 1 or more and 7 or less, an allyl group or an allyl derivative. The heterogeneous polynuclear complex allows a composite metal thin film or a composite metal compound thin film containing a plurality of metals to be formed from a single raw material. 

Heterogeneous polynuclear complex for use in the chemical deposition of composite metal or metal compound thin films

The invention provides a raw material for chemical deposition having properties required for a CVD compound, that is, which has a high vapor pressure, can be formed into a film at low temperatures (about 250&#xb0; C. or less), and also has moderate thermal stability. The invention relates to a raw material for chemical deposition, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material for chemical deposition including an organoruthenium compound represented by the following formula, in which a cyclohexadienyl group or a derivative thereof and a pentadienyl group or a derivative thereof are coordinated to ruthenium: 

Raw material for chemical deposition including organoruthenium compound, and chemical deposition method using the raw material for chemical deposition

A method for manufacturing tris(&#x3b2;-diketonato)iridium by reacting &#x3b2;-diketone with an iridium compound, in which an activation treatment including (a) an alkali treatment and (b) an acid treatment described below is applied to the iridium compound to activate the iridium compound, and to subsequently react the &#x3b2;-diketone, (a) an alkali treatment: a treatment of adding alkali to a solution of the iridium compound to raise pH of the solution to a more alkaline side than that before the alkali addition and to not less than 10, and (b) an acid treatment: a treatment of adding acid to the solution subjected to the alkali treatment to lower pH of the solution to a more acidic side than that before the acid addition and to make the pH difference between solutions before and after the acid addition be not less than 0.1 and not more than 10. The present invention allows manufacture of tris(&#x3b2;-diketonato)iridium utilizing a wide variety of &#x3b2;-diketones.

Method for manufacturing iridium complex

The present invention relates to a raw material for chemical deposition shown in a formulae below and including an organoplatinum compound in which diimine containing two imines and an alkyl anion are coordinated to divalent platinum. In the formulae, each of substituents Rto Ron the diimine represents a hydrogen atom, an alkyl group or the like and has a carbon number of 5 or less. Each of alkyl anions Rand Ris an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure and low decomposition temperature, and thus it is possible to manufacture a platinum thin film at low temperature. 

Raw material for chemical deposition composed of organoplatinum compound, and chemical deposition method using the raw material for chemical deposition

The present invention relates to a raw material for a cyclometalated iridium complex, and provides a technique that makes it possible to obtain a cyclometalated iridium complex in higher yield at a lower reaction temperature than using tris(2,4-pentanedionato)iridium(III). The present invention relates to a raw material for a cyclometalated iridium complex, including an organic iridium material for producing a cyclometalated iridium complex, the organic iridium material being a tris(&#x3b2;-diketonato)iridium(III), in which an asymmetric &#x3b2;-diketone is coordinated to iridium.

Raw material and production method for cyclometalated iridium complex

A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250&#xb0; C. as film formation conditions (In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. Rto Rwhich are substituent groups of the cyclopentadienyl group represent CHand n represents an integer of 0 to 6).

Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate

Growing community of inventors

Tsukuba, Japan

Ryosuke Harada