Tokyo Ohka Kogyo Co., Ltd.

Ryoji Watanabe

Masaru Takeshita

Takayoshi Mori

Yoichi Hori

Rikita Tsunoda

Takeshi Iwai

Takehiro Seshimo

Kazufumi Sato

Toshiyuki Ogata

Masahito Yahagi

Tomoya Kumagai

Tomoyuki Ando

Shogo Matsumaru

Sho Abe

Mitsuo Hagihara

Kenta Suzuki

Komei Hirahara

Keiichi Ibata

A hard-mask forming composition, which is used for forming a hard mask used in lithography, including a first resin and a second resin, in which an amount of carbon contained in the first resin is 85% by mass or more with respect to the total mass of all elements constituting the first resin, and the amount of carbon contained in the second resin is 70% by mass or more with respect to the total mass of all elements constituting the second resin and less than the amount of carbon contained in the first resin.

Hard-mask forming composition and method for manufacturing electronic component

A method for forming a resist pattern including forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes alkali developing the exposed positive-type resist film; preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto a support on which the first contact hole pattern is formed; forming organic solvent-soluble and organic solvent-insoluble regions on the hole-unformed portion, which includes heating the structure; and forming a second contact hole pattern on the hole-unformed portion, which includes developing the heated structure with an organic solvent.

Method for forming resist pattern

A coating agent capable of favorably reducing the roughness of a resist pattern, and a method for forming a resist pattern in which roughness is reduced. The method includes coating the resist pattern with the coating agent. The coating agent is a composition including a resin, an amine compound, and a solvent, the amine compound having an aliphatic hydrocarbon group having 8 to 20 carbon atoms and having 1 or more unsaturated double bond and a group having a specific amount of ethylene oxide and/or propylene oxide added thereto.

Coating agent for reducing roughness of resist pattern, and method for forming resist pattern in which roughness is reduced

A coating agent capable of favorably reducing the roughness of a resist pattern and a method for forming a resist pattern in which roughness is reduced. The method includes coating the resist pattern with the coating agent. The coating agent is a composition including a resin, a quaternary carbon-atom-containing compound, and a solvent, the quaternary carbon-atom-containing compound having an aliphatic hydrocarbon group having 1 to 8 carbon atoms and a group having a specific structure having a specific amount of ethylene oxide and/or propylene oxide added thereto.

A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: 

Resist pattern forming method and developer for lithography

A method of forming a resist pattern, including: a step A in which a positive resist composition is applied to a substrate to form a positive resist film, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern; a step B in which a solution containing an acid or a thermoacid generator is applied to the substrate whereon the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern; a step C in which the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator; and a step D in which the structure after heating is developed with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern.

Method for forming resist pattern, resist pattern splitting agent, split pattern improving agent, resist pattern splitting material, and positive resist composition for forming split pattern

A method of trimming a resist pattern, including forming a positive resist film on a substrate, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern having an alkali-insoluble region on the surface thereof; applying a resist trimming composition including an acid to the substrate on which the first resist pattern is formed; a heating the first resist pattern coated with the resist trimming composition, and the solubility of the first resist pattern in a developing solution is changed under action of the acid included in the resist trimming composition; and developing the first resist pattern after heating with an organic solvent to remove the alkali-insoluble region of the first resist pattern, the resist trimming composition including the acid and a solvent which does not dissolve the first resist pattern.

Method of trimming resist pattern

A pattern-forming method, including: forming a first resist film by applying a first chemically amplified resist composition onto a support, forming a plurality of resist patterns by selectively exposing and then developing the first resist film, forming a plurality of coated patterns by forming a coating film composed of a metal oxide film on the surface of each resist pattern, forming a second resist film by applying a second chemically amplified resist composition onto the support having the coated patterns formed thereon, and selectively exposing and then developing the second resist film, thereby forming a pattern composed of the plurality of coated patterns and a resist pattern formed in the second resist film onto the support.

Pattern-forming method, metal oxide film-forming material and method for using the metal oxide film-forming material

A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, wherein: R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; Yrepresents an aliphatic cyclic group; Z represents a tertiary alkyl group-containing group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, such that a+b=1 to 3; and each of c, d and e independently represents an integer of 0 to 3.

Positive resist composition and method of forming resist pattern

A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.

Method of forming resist pattern

A resist composition of the present invention is obtained by dissolving a resin component (A) that displays changed alkali solubility under action of acid and an acid generator component (B) that generates acid upon exposure in an organic solvent (S), wherein the organic solvent (S) includes an aromatic organic solvent (S1). According to the present invention, a resist composition and a method of forming a resist pattern, in which the level of LWR is reduced, can be provided.

Resist composition and method of forming resist pattern

A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, wherein: R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; each of Yand Yindependently represents an aliphatic cyclic group; Z represents a tertiary alkyl group-containing group or an alkoxyalkyl group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, such that a+b=1 to 3; each of c, d and e independently represents an integer of 0 to 3; each of g and h independently represents an integer of 0 to 3; and i represents an integer of 1 to 3.

A positive resist composition and method of forming a resist pattern are provided which enable formation of a resist pattern having excellent shape with reduced LWR. The positive resist composition includes a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) having a structural unit (a1) which has an acetal-type protection group, and the acid-generator component (B) including an acid generator (B1) having a cation moiety represented by general formula (b-5) shown below: wherein Rand Reach independently represents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; Rrepresents an aryl group or alkyl group which may or may not have a substituent; and n' and n&#x2033; each independently represents an integer of 0 to 3.

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Kawasaki, Japan

Ryoji Watanabe