Tokyo Electron Limited

Ryoichi Uemura

Hiroshi Tomita

Kunie Ogata

Masahide Tadokoro

Shinichi Shinozuka

Michio Tanaka

Yasushi Takiguchi

Koji Harada

Mitsuteru Yano

A coating processing apparatus includes: a substrate holding part for horizontally holding a substrate and configured to rotate around a vertical axis; a coating liquid supply part for supplying a coating liquid onto the substrate; a cup body surrounding the substrate; an annular exhaust path formed along a circumferential direction of the cup body between an inner peripheral surface of the cup body and an inner member installed inside the cup body; a coating liquid collecting member installed to cover the exhaust path and having an opening, and configured to collect the coating liquid scattering from the substrate; at least one solvent storage portion formed in the coating liquid collecting member and configured to store a first solvent for dissolving the coating liquid collected in the coating liquid collecting member; and a solvent supply part for supplying the first solvent to the at least one solvent storage portion.

Coating processing apparatus and coating liquid collecting member

A substrate cleaning method includes: a first step in which a cleaning liquid is ejected from a nozzle Nto a central portion of a wafer W; a second step in which a dry gas is ejected from a nozzle Nto the central portion of the wafer W to form a dry area; a third step in which the cleaning liquid is ejected from the nozzle Nwhile the nozzle Nis moved from a central side of the wafer W to a peripheral side thereof; a fourth step in which a width of an intermediate area generated between a wet area and the dry area is acquired; and a fifth step in which, when the width of the intermediate area exceeds a predetermined threshold value, a process parameter is changed such that the width of the intermediate area becomes the threshold value or less.

Substrate cleaning method, substrate cleaning apparatus, and computer-readable storage medium

In the present invention, temperature drop amounts of heating plate regions when the substrate is mounted on a heating plate are detected to detect a warped state of the substrate. From the temperature drop amounts of the heating plate regions, correction values for set temperatures of the heating plate regions are calculated. The calculation of the correction values for the set temperatures of the heating plate regions is performed by estimating steady temperatures within the substrate to be heat-processed on the heating plate from the temperature drop amounts of the heating plate regions using a correlation obtained in advance. From the estimated steady temperatures within the substrate and the temperature drop amounts of the heating regions, the correction values for the set temperatures of the heating plate regions are calculated. Based on the correction values for the set temperatures, the set temperatures of the heating plate regions are changed.

Temperature control method of heat processing plate, computer storage medium, and temperature control apparatus of heat processing plate

A pattern forming systemincludes a checking apparatus, a storage device, and a control section. The checking apparatusis configured to measure and check a state of a resist pattern formed on a substrate W after a developing process and output a first check result thus obtained, and to measure and check a state of a pattern formed on the substrate after an etching process and output a second check result thus obtained. The storage devicestores a correlation formula obtained from the first check result and the second check result. The control sectionis configured to use the correlation formula to obtain a target value of the state of the pattern after the developing process from a target value of the state of the pattern after the etching process, and to use a difference between the target value of the state of the pattern after the developing process and the first check result to set a condition for the first heat process and/or the second heat process.

Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program

A pattern forming systemincludes a checking apparatusand a control section. The checking apparatusis configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control sectionis configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus, to set a process condition for a first heat processtoor a second heat processtoso as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.

A pattern forming systemis configured to execute a series of processes, which includes a first heat process for performing a heat process on a substrate W after a resist liquid coating process, a light exposure process for performing light exposure on a resist film in accordance with a predetermined pattern, a second heat process for promoting a chemical reaction in the resist film after the light exposure, a developing process for developing the resist film after the light exposure, and an etching process for etching an oxide film by use of a resist pattern formed by the developing process as a mask. The system includes a checking apparatusconfigured to measure and check a state of a pattern formed after the etching process, and a control sectionconfigured to use a check result to set a condition for the first heat process and/or the second heat process so as to cause the state of the pattern to be uniform on a surface of the substrate W after the etching process.

Process gas supply/stop operations are intermittently performed. As the hydrophobic process progresses, the temperature of a gas contract portion of a wafer lowers. While the hydrophobic process stops, the temperature of the gas contact portion of the wafer rises to the original temperature. Thereafter, the hydrophobic process resumes. Thus, while the temperature of the gas contact portion of wafer is suppressed from largely lowering, the hydrophobic process can be performed. Thus, non-uniformity of the hydrophobic process on the front surface of the wafer is reduced.

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Kumamoto, Japan

Ryoichi Uemura