Shindengen Electric Manufacturing Company Limited

Ryohei Osawa

Yusuke Maeyama

Atsushi Ogasawara

Shunichi Nakamura

Yoshiyuki Watanabe

Akihiko Shibukawa

Yoshitaka Araki

A wide gap semiconductor device comprises a first conductive-type semiconductor layer (); a second conductive-type region (), () that is provided on the first conductive-type semiconductor layer (); a first electrode (), of which a part is disposed on the second conductive-type region (), () and the other part is disposed on the first conductive-type semiconductor layer (); an insulating layer (), (), () that is provided adjacent to the first electrode () on the first conductive-type semiconductor layer () and that extends to an end part of the wide gap semiconductor device; and a second electrode () that is provided between the first electrode () and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer ().

Wide gap semiconductor device and method of manufacturing the same

A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers.

Schottky barrier diode

Growing community of inventors

Saitama, Japan

Ryohei Osawa