Hitachi-Kokusai Electric Inc.

Hitachi, Ltd.

Ryohei Maeno

Masanori Sakai

Arito Ogawa

Yukinao Kaga

Atsuro Seino

Atsuhiko Ashitani

Tsuyoshi Fujiwara

Hidenori Sato

Kiyomi Katsuyama

Kiyohiko Sato

Daichi Matsumoto

Akira Otaguro

Yukino Ishii

The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Method of manufacturing semiconductor device

To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

The orientation polarization (positive and negative) of the Si&#x2014;N bonds and the Si&#x2014;O bonds is canceled, thereby enabling to minimize the polarization in a capacitive insulating film. As a result, a silicon oxynitride film with a small voltage secondary coefficient is formed, and is applied as a capacitive insulating film for use in a MIM capacitor. Specifically, the refractive index 'n' of the silicon oxynitride film satisfies 1.47&#x2266;n&#x2266;1.53, for light with a wavelength of 633 nm.

Transistor with MIM (Metal-Insulator-Metal) capacitor

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Toyama, Japan

Ryohei Maeno