Tokyo Electron Limited

Tocalo Co., Ltd.

Ryo Yamasaki

Yoshiyuki Kobayashi

Yoshio Harada

Takahiro Murakami

Junichi Takeuchi

Kensuke Taguchi

Keigo Kobayashi

Mitsuharu Inaba

Kaname Yasuda

An electrostatic chuck and a manufacturing method are disclosed in which drawbacks of using an adhesive are not existent and a freedom degree of design is high. The electrostatic chuck includes a substrate part constituting a main chuck body, a first insulating layer of a spray coating formed to the surface of the substrate part, a heater part of an electric conductor formed by applying a conductive paste to the surface of the first insulating layer, a second insulating layer of a spray coating formed to the surface of the first insulating layer so as to cover the heater part, an electrode part formed by thermal spraying to the surface of the second insulating layer and a dielectric layer of a spray coating formed to the surface of the second layer so as to cover the electrode part and lowers a volume resistivity without using an adhesive.

Electrostatic chuck and method of manufacturing electrostatic chuck

A substrate mounting table includes an electrostatic chuck for attracting and holding a target substrate and a base for holding the electrostatic chuck thereon. The base includes a protruding portion having a large height; and an outer peripheral surface provided around the protruding portion at a position lower than the protruding portion by a preset height. A thermally sprayed film having a thickness equivalent to a height difference between the protruding portion and the outer peripheral surface is deposited on the outer peripheral surface such that the thermally sprayed film becomes continuous with the protruding portion. The electrostatic chuck is formed by installing an electrode between insulating members, and the electrostatic chuck is fixed to the base by using an adhesive to cover a boundary between a top surface of the protruding portion and a surface of the thermally sprayed film.

Substrate mounting table for plasma processing apparatus, plasma processing apparatus and insulating film forming method

Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment. A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIb of the Periodic Table coated directed or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.

Ceramic coating member for semiconductor processing apparatus

Growing community of inventors

Hyogo, Japan

Ryo Yamasaki