Fujitsu Corporation

Ryo Tsujimura

Tomoyuki Okada

Masahiko Minemura

Mitsuo Sakurai

Yoshimasa Iiduka

Kenji Kikuchi

A method of verifying optical proximity correction includes the steps of generating first mask pattern data from design data under first condition, generating first corrected pattern data by applying optical proximity correction to the first mask pattern data, generating second mask pattern data from the design data under second condition, generating second corrected pattern data by applying optical proximity correction to the second mask pattern data, and comparing the first corrected pattern data and the second corrected pattern data to check whether the first corrected pattern data and the second corrected pattern data match.

Method and system for efficiently verifying optical proximity correction

A full area of a semiconductor integrated circuit is divided into unit areas, a mask data file for use in a beam exposure system or an inspection apparatus is produced based on CAD data of the full area, full-area header information in which a starting address of a mask data of each unit area relates to positional information on said unit area, partial-area header information corresponding to each of partial areas obtained by division of the full area is produced based on the full-area header information and mask data of the partial areas are extracted from a mask data of the full area based on the partial area header information to produce the mask data files corresponding to the partial area header information.

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Kawasaki, Japan

Ryo Tsujimura