Ebara Corporation

Ryo Tajima

Kenji Watanabe

Masahiro Hatakeyama

Kenichi Suematsu

Shoji Yoshikawa

Takeshi Murakami

Tsutomu Karimata

Nobuharu Noji

Tohru Satake

Toshifumi Kimba

Hirosi Sobukawa

Keiichi Tohyama

Yutaka Tabe

Kenji Terao

Kiwamu Tsukamoto

Shinichi Okada

Yasushi Toma

Tatsuya Kohama

Takehide Hayashi

Masatoshi Tsuneoka

A electron beam irradiation apparatusincludes a helping column determination unitthat determines, as a helping column, a column having a main irradiation area that is not included in a target irradiation area to be irradiated with an electron beam from among a plurality of columnswhen information on the target irradiation area is input, and a helped column determination unitthat determines, as a helped column for the determined helping column, a column that is adjacent to the helping column and has a main irradiation area included in the target irradiation area from among the plurality of columns. A beam scannerof the helping column performs a helping irradiation control for performing electron beam irradiation in the sub-irradiation area of the helping column, thereby irradiating the target irradiation area of the helped column with an electron beam.

Electron beam irradiation apparatus with overlapping beam columns and helping columns

Provided is an electron beam irradiation apparatus including: an aligner configured to perform an alignment of an electron beam by deflecting the electron beam; a deflector having a plurality of electrodes and configured to deflect the electron beam after passing through the aligner; and an adjuster configured to adjust deflection caused by the aligner, wherein the adjuster is configured to perform, on each of the plurality of electrodes, detecting an image of the electron beam by applying a test voltage to one of the plurality of electrodes and applying a reference voltage to the other electrodes, determine a position shift of the electron beam based on each position of the image of the electron beam corresponding to each electrode, and adjust deflection of the aligner so as to cancel the position shift of the electron beam.

Electron beam irradiation apparatus and electron beam alignment method

An adjustment method for adjusting a path of an electron beam passing through an electron beam device including at least one unit having at least one lens and at least one aligner electrode, and a detector configured to detect the electron beam, the method including: a step of measuring, by a coordinate measuring machine, an assembly tolerance for each of a plurality of the units constituting the electron beam device; a step of determining a shift amount of the electron beam at a position of the at least one of the lenses; a step of determining an electrode condition for each of a plurality of the aligner electrodes included in the units in a manner such that a shift amount of the electron beam is to be the determined shift amount; and a step of setting each of the aligner electrodes to the corresponding determined electrode condition.

Adjustment method and electron beam device

According to one embodiment, provided is a deflection sensitivity calculation method for calculating deflection sensitivity of a deflector in an electron beam irradiation apparatus that irradiates an irradiation object on a stage with an electron beam by causing the deflector to deflect the electron beam, the deflection sensitivity calculation method including: irradiating an area that covers an adjustment plate with an electron beam by scanning a deflection parameter that controls deflection of the deflector in a predetermined width; detecting a current value detected from the adjustment plate; forming an image corresponding to the detected current value, a number of pixels of the image being known; calculating the number of pixels of a portion corresponding to the adjustment plate in the formed image; and calculating the deflection sensitivity of the deflector.

Deflection sensitivity calculation method and deflection sensitivity calculation system

Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

Electron-beam irradiated area adjustment method and adjustment system, electron-beam irradiated region correction method, and electron beam irradiation apparatus

An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

Inspection device

A surface processing apparatus is an apparatus which performs surface processing on an inspection objectby irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source(including lens system that controls beam shape of electron beam) which generates an electron beam; a stageon which an inspection objectto be irradiated with the electron beam is set; and an optical microscopefor checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection objectis set at 10 nA to 100 A.

Surface processing apparatus

A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

Testing apparatus using charged particles and device manufacturing method using the testing apparatus

An inspection system includes a primary optical system configured to irradiate a charged particle or an electromagnetic wave as a beam, a movable unit configured to hold an inspection target and move the target through a position where the beam is irradiated, and a TDI sensor configured to integrate an amount of secondary charged particles in a predetermined direction to sequentially transfer the integrated amount. The secondary charged particles are obtained by irradiating the beam onto the target while moving the movable unit in the predetermined direction. The inspection system further includes a prevention module configured to prevent an arrival of the beam at the target side or an arrival of the secondary charged particles at the TDI sensor during a time period from one transfer to the following transfer after the elapse of a predetermined length of time from the one transfer and until the following transfer.

Inspection system, inspection image data generation method, inspection display unit, defect determination method, and storage medium on which inspection display program is recorded

A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector

A charged particle beam apparatusfor observing and estimating a sample W by applying a charged particle beam to sample W to detect secondary charged particles, such as electrons emitted from the sample, reflected electrons and backscattered electrons comprises astigmatism adjusting meansfor adjusting astigmatism of the charged particle beam. Astigmatism adjusting meansis supplied with a correction voltage which maximizes a focal estimation value obtained from a pattern formed on sample W. Astigmatism adjusting meansis a multipole including a plurality of pairs of electrodes or coils facing each other to place the optical axis of the charged particle beam at the center. Also disclosed is a charged particle beam apparatuscapable of observation and estimation of a sample surface in a condition where no charge up exists over the whole sample W.

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Tokyo, Japan

Ryo Tajima