Canon Kabushiki Kaisha

Ryo Nakayama

Hiroyuki Ishii

Takahiro Matsumoto

Takafumi Miyaharu

Tadashi Arai

Kenji Yamazoe

Yasuyuki Unno

Yuichi Gyoda

Koji Mikami

Kouichirou Tsujita

Hironobu Fujishima

Tooru Kawashima

Yuichi Fujita

A detection apparatus includes an image sensing device having an image sensing plane including a first periodic structure; and an optical system configured to illuminate a detection target including a second periodic structure different from the first periodic structure, and form an image of light from the detection target on the image sensing plane. Light having entered the image sensing plane generates a plurality of diffracted light beams of different orders in accordance with the first periodic structure. A normal of the image sensing plane is tilted with respect to an optical axis of the optical system such that the optical axis is located between diffracted light beams of adjacent orders not less than a first order among the plurality of diffracted light beams.

Detection apparatus, lithography apparatus, and article manufacturing method

A detection apparatus that detects a position deviation between an original and a substrate is provided. The apparatus includes an illumination optical system configured to illuminate a first diffraction grating arranged on the original and a second diffraction grating arranged on the substrate, and a detection optical system configured to detect interference light formed by diffracted light diffracted by the first diffraction grating and diffracted light diffracted by the second diffraction grating. The illumination optical system performs dipole illumination by light including two poles in a pupil plane of the illumination optical system, and polarization directions of light beams emitted from the two poles, respectively, and incident on the substrate are orthogonal to each other.

A method for generating a pattern includes defining a footprint of a main pattern in each cell, arranging a first cell and a second cell which has an auxiliary pattern outside the footprint of the main pattern, side by side in such a manner that the auxiliary pattern outside the footprint of the second cell is present in the footprint of the main pattern of the first cell, and generating the pattern of the mask by removing a pattern element of the auxiliary pattern outside the footprint of the second cell in a portion where the pattern element of the auxiliary pattern outside the footprint of the second cell is close to or overlaps with the main pattern in the first cell of the first cell and the second cell arranged side by side.

Method for generating pattern, storage medium, and information processing apparatus

A method which determines patterns for a plurality of masks to be executed by a processor includes acquiring data on a pattern containing a plurality of pattern elements, and assigning the acquired plurality of pattern elements into masks, decomposing the acquired plurality of pattern elements into patterns of the masks, and calculating an evaluation value for an evaluation index, based on a number of masks, the distances between a plurality of pattern elements in each mask, and an angle of a line connecting a plurality of pattern elements in each mask. In the method, a pattern of each mask is determined based on the calculated evaluation value.

Method for determining mask pattern, non-transitory recording medium, and information processing apparatus

A method for generating a pattern including patterns of cells having assist patterns arranged therein. The present invention provides a method for generating a pattern of a cell used when a mask pattern is generated by arranging cells selected from among a plurality of types of cells. The method includes generating a pattern including isolated rectangular pattern elements and an assist pattern as a cell pattern by obtaining data on a cell including the rectangular pattern elements and generating the assist pattern which assist resolution of the rectangular pattern elements in accordance with the data.

Pattern generation method for generating cell pattern including pattern element and assist pattern, recording medium, information processing apparatus, and mask fabrication method

In a method for generating, with a computer, a pattern of a mask, a pattern on an object plane of a projection optical system is set, shifted plural pupil functions are generated, a matrix containing the generated plural pupil functions is defined, an image of the pattern on the object plane is calculated by generating a vector obtained by transposing and complex-conjugating a vector containing, as components, values of the pupil functions at origin coordinates on a pupil plane from among components of the matrix, and performing convolution integral between the pattern on the object plane and a Fourier transform of a product of the vector and the matrix, an assist pattern for the pattern on the object plane is generated using the calculated image, and a pattern of the mask including the pattern on the object plane and the assist pattern is generated.

Mask pattern generation method and optical image calculation method

A recording medium stores a program for causing a computer to execute a method of calculating a resist pattern. The method includes: a first step of calculating a light intensity distribution of an optical image formed on the resist, based on the reticle pattern and an exposure condition; a second step of convoluting, using a first diffusion length, the calculated light intensity distribution; a third step of calculating a representative light intensity from the calculated light intensity distribution or the convoluted light intensity distribution; a fourth step of correcting the convoluted light intensity distribution by adding, to the convoluted light intensity distribution, a correction function including a first function given by: where J is the distribution of the representative light intensity; and a fifth step of calculating the resist pattern based on the corrected light intensity distribution and a slice level set in advance.

Resist pattern calculation method and calculation program storage medium

The present invention provides a pattern correction method of, when a plurality of pattern elements on a mask used to process a line pattern formed on a substrate are transferred to the substrate, performing proximity effect correction of each pattern element such that a transferred image obtains a dimension equal to a target dimension, comprising setting, based on a density of a pattern element in a peripheral region surrounding a pattern element of interest, a dimension of the pattern element whose transferred image formed under the density of the pattern element has a dimension equal to the target dimension as a reference value for the pattern element of interest, and calculating a dimension of transferred image of the pattern element of interest while changing around the reference value and determining the dimension of the pattern element of interest based on the calculation result.

Pattern correction method, storage medium, information processing apparatus, method of manufacturing mask, exposure apparatus, and method of manufacturing device

Data regarding a first corrected patterns on a single cell corrected such that an evaluation value of a pattern formed on a substrate after an image of a pattern of the single cell is projected onto a resist on the substrate and the resist is developed is obtained for each of a plurality of cells, a first evaluation value obtained by evaluating a projected image of the first corrected pattern on the single cell generated by the projection system is obtained for each of the cells, a second evaluation value obtained by, when the cells are arranged adjacent to one another, evaluating the projected images of the first corrected patterns on the cells is calculated, and creating a second corrected pattern by correcting the first corrected patterns on the cells arranged adjacent to one another such that the second evaluation value becomes close to the first evaluation value.

Growing community of inventors

Utsunomiya, Japan

Ryo Nakayama