Lsi Logic Corporation

Ryan Tadashi Fujimoto

Shiqun Gu

Peter McGrath

Hong Lin

Optical emission spectra from a test wafer during a plasma process are measured using a spectrometer. The plasma charging voltage retained by (detected by) the test wafer is measured after the process step is completed. The emission spectra are correlated with the plasma charging voltage to identify the species contributing to the plasma charging voltage. The optical emission spectra are monitored in real time to optimize the plasma process to prevent plasma charging damage. The optical emission spectra are also monitored to control the plasma process drift.

Method of reducing process plasma damage using optical spectroscopy

A method for forming a conductive trace on a substrate. The conductive trace is patterned with a photoresist mask and etched, thereby forming a polymer layer on a top surface and sidewalls of the photoresist mask and on sidewalls of the conductive trace. The polymer layer contains entrained chlorine gas. The substrate is heated on a chuck in a reaction chamber. A remote plasma is generated from ammonia gas and oxygen gas. The substrate is contacted with the ammonia and oxygen plasma, thereby withdrawing a substantial portion of the entrained chlorine gas from the polymer layer. A radio frequency potential is applied to the chuck on which the substrate resides, thereby creating a reactive ion etchant from the ammonia and oxygen plasma in the reaction chamber and removing the polymer layer from the top surface of the photoresist mask. The photoresist mask is thus exposed, and then removed in an ashing process.

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Gresham, OR, United States of America

Ryan Tadashi Fujimoto