Intel Corporation

Ryan Lei

Mohamad A Shaheen

Peter G Tolchinsky

Irwin Yablok

Gregory Martin Chrysler

Shriram Ramanathan

Maxim Kelman

David Chau

A method of forming a germanium-on-insulator (GOI). An epitaxial germanium layer is formed on top of a first substrate. A first dielectric film is formed on top of the epitaxial germanium layer. A second substrate is provided. The first substrate is bonded to the second substrate by bonding the first dielectric film to the second substrate. The bonding resulted in a bonded wafer pair. The first substrate is removed after the bonding to expose epitaxial germanium layer to form the GOI substrate.

Germanium on insulator fabrication via epitaxial germanium bonding

An embodiment of the present invention is a technique to provide heat extraction for semiconductor devices. At least a thermoelectric film is fabricated onto a bare wafer. The backside of the bare wafer is bonded to an active wafer having at least a device. The bonded bare and active wafers are annealed.

Integrating thermoelectric elements into wafer for heat extraction

More complete bonding of wafers may be achieved out to the edge regions of the wafer by constrained bond strengthening of the wafers in a pressure bonding apparatus after direct wafer bonding. The pressure bonding process may be accompanied by the application of not above room temperature.

Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process

In one embodiment, a method comprises placing a first and a second substrate into a reaction chamber, the first substrate being made of an indium antimonide material and having a first surface and the second substrate being made of a silicon or a silicon dioxide material and having a second surface; exposing the first and second surfaces to an oxygen plasma; forming a bond between the first and the second substrates by placing the first surface in contact with the second surface; and annealing the first and the second substrates to strengthen the bond.

Bonding of substrates

A method of bonding a germanium (Ge) wafer to a semiconductor wafer. A Ge wafer having a cleaving plane defined by ion implantation is provided. A surface activation on at least one surface of the Ge wafer is performed. A semiconductor wafer is provided. A surface activation on at least one surface of the semiconductor wafer is performed. The Ge wafer is bonded to the semiconductor wafer to form a bonded wafer pair. A first annealing is performed to the bonded wafer pair. The first annealing occurs at a temperature approximately between 50-100&deg; C. A second annealing is performed to the bonded wafer pair. The second annealing occurs at a temperature approximately between 110-170&deg; C. The second annealing cleaves the Ge wafer at the cleaving plane.

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Hillsboro, OR, United States of America

Ryan Lei