Applied Materials, Inc.

Ruizhe Ren

Jon Christian Farr

Rongping Wang

Jiao Yang

Alfredo Granados

Peter Demonte

Heng Wang

Chethan Mangalore

Zhigang Wang

Parthiban Balakrishna

An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer () on a substrate () in an etch chamber () to form an open feature () having a bottom surface () and sidewalls in the material layer (); (b) forming a protection layer () on the sidewalls and the bottom surface () of the open feature () from a protection layer () gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer () formed on the bottom surface () of the open feature () from a bottom surface () open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer () from the bottom surface () of the open feature () until a desired depth of the open feature () is reached.

Methods for etching a material layer for semiconductor applications

Embodiments of the present disclosure include a radial frequency plasma source having a split type inner coil assembly. In one embodiment, the split type inner coil assembly comprises two intertwining coils. In another embodiment, the split type inner coil assembly includes looped coils forming a dome.

Source RF power split inner coil to improve BCD and etch depth performance

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Shaanxi, China

Ruizhe Ren